FDZ201N Datasheet and Replacement. Cross Reference Search

FDZ201N Datasheet (PDF)

..1. Size:174K fairchild semi
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January 2004 FDZ201N N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 9 A, 20 V. RDS(ON) = 18 m @ VGS = 4.5 V PowerTrench process with state-of-the-art BGARDS(ON) = 30 m @ VGS = 2.5 V packaging, the FDZ201N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a Occupies onl

9.1. Size:217K fairchild semi
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February 2006 FDZ206P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 13 A, 20 V. rDS(on) = 9.5 m @ VGS = 4.5 V PowerTrench process with state of the art BGA rDS(on) = 14.5 m @ VGS = 2.5 V packaging, the FDZ206P minimizes both PCB space and rDS(on). This BGA M

9.2. Size:193K fairchild semi
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February 2006 FDZ208P P-Channel 30 Volt PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 30 Volt P-Channel 12.5 A, 30 V. rDS(on) = 10.5 m @ VGS = 10 V Trench II Process with 25 Volts Vgs. Abs. Max Gate rDS(on) = 16.5 m @ VGS = 4.5 V Rating for the ultimate low rDS(on) Battery Protection MOSFET. Th

9.3. Size:167K fairchild semi
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January 2004 FDZ202P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 5.5 A, 20 V. RDS(ON) = 45 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 75 m @ VGS = 2.5 V packaging, the FDZ202P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a