Справочник MOSFET. FDZ201N

 

FDZ201N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDZ201N
   Маркировка: 201N
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 2 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
   Пороговое напряжение включения |Ugs(th)|: 1.5 V
   Максимально допустимый постоянный ток стока |Id|: 9 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 11 nC
   Время нарастания (tr): 11 ns
   Выходная емкость (Cd): 268 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.018 Ohm
   Тип корпуса: SSOT-6

 Аналог (замена) для FDZ201N

 

 

FDZ201N Datasheet (PDF)

 ..1. Size:174K  fairchild semi
 fdz201n.pdf

FDZ201N FDZ201N

January 2004 FDZ201N N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 9 A, 20 V. RDS(ON) = 18 m @ VGS = 4.5 V PowerTrench process with state-of-the-art BGARDS(ON) = 30 m @ VGS = 2.5 V packaging, the FDZ201N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a Occupies onl

 9.1. Size:217K  fairchild semi
 fdz206p.pdf

FDZ201N FDZ201N

February 2006 FDZ206P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 13 A, 20 V. rDS(on) = 9.5 m @ VGS = 4.5 V PowerTrench process with state of the art BGA rDS(on) = 14.5 m @ VGS = 2.5 V packaging, the FDZ206P minimizes both PCB space and rDS(on). This BGA M

 9.2. Size:193K  fairchild semi
 fdz208p.pdf

FDZ201N FDZ201N

February 2006 FDZ208P P-Channel 30 Volt PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 30 Volt P-Channel 12.5 A, 30 V. rDS(on) = 10.5 m @ VGS = 10 V Trench II Process with 25 Volts Vgs. Abs. Max Gate rDS(on) = 16.5 m @ VGS = 4.5 V Rating for the ultimate low rDS(on) Battery Protection MOSFET. Th

 9.3. Size:167K  fairchild semi
 fdz202p.pdf

FDZ201N FDZ201N

January 2004 FDZ202P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 5.5 A, 20 V. RDS(ON) = 45 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 75 m @ VGS = 2.5 V packaging, the FDZ202P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a

 9.4. Size:170K  fairchild semi
 fdz209n.pdf

FDZ201N FDZ201N

May 2004 FDZ209N 60V N-Channel PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced PowerTrench process 4 A, 60 V. RDS(ON) = 80 m @ VGS = 5 V with state-of-the-art BGA packaging, the FDZ209N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging Occupies only 5 mm2 of PCB area: only 55% of the

 9.5. Size:166K  fairchild semi
 fdz204p.pdf

FDZ201N FDZ201N

January 2004 FDZ204P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 4.5 A, 20 V. RDS(ON) = 45 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 75 m @ VGS = 2.5 V packaging, the FDZ204P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a

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