FDZ298N Specs and Replacement

Type Designator: FDZ298N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: BGA

FDZ298N substitution

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FDZ298N datasheet

 ..1. Size:136K  fairchild semi
 fdz298n.pdf pdf_icon

FDZ298N

May 2005 FDZ298N N-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild s advanced 2.5V specified 6 A, 20 V RDS(ON) = 27 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 39 m @ VGS = 2.5 V packaging, the FDZ298N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a Occupies only 2.... See More ⇒

 9.1. Size:208K  fairchild semi
 fdz299p.pdf pdf_icon

FDZ298N

February 2006 FDZ299P P-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild s advanced 2.5V specified 4.6 A, 20 V RDS(ON) = 55 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 80 m @ VGS = 2.5 V packaging, the FDZ299P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a ... See More ⇒

 9.2. Size:241K  fairchild semi
 fdz291p.pdf pdf_icon

FDZ298N

February 2006 FDZ291P P-Channel 1.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild s advanced 1.5V specified 4.6 A, 20 V RDS(ON) = 40 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 60 m @ VGS = 2.5 V packaging, the FDZ291P minimizes both PCB space RDS(ON) = 160 m @ VGS = 1.5 V and... See More ⇒

 9.3. Size:145K  fairchild semi
 fdz294n.pdf pdf_icon

FDZ298N

July 2005 FDZ294N N-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild s advanced 2.5V specified 6 A, 20 V RDS(ON) = 23 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 34 m @ VGS = 2.5 V packaging, the FDZ294N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a Occupies only 2... See More ⇒

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Detailed specifications: FDZ202P, FDZ204P, FDZ206P, FDZ208P, FDZ209N, FDZ291P, FDZ293P, FDZ294N, IRF830, FDZ299P, FDZ3N513ZT, FDZ4670, FDZ4670S, FDZ493P, FDZ5047N, FDZ7064AS, FDZ7064N

Keywords - FDZ298N MOSFET specs

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