All MOSFET. FDZ298N Datasheet

 

FDZ298N Datasheet and Replacement


   Type Designator: FDZ298N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: BGA
 

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FDZ298N Datasheet (PDF)

 ..1. Size:136K  fairchild semi
 fdz298n.pdf pdf_icon

FDZ298N

May 2005 FDZ298N N-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 6 A, 20 V RDS(ON) = 27 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 39 m @ VGS = 2.5 V packaging, the FDZ298N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a Occupies only 2.

 9.1. Size:208K  fairchild semi
 fdz299p.pdf pdf_icon

FDZ298N

February 2006 FDZ299P P-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 4.6 A, 20 V RDS(ON) = 55 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 80 m @ VGS = 2.5 V packaging, the FDZ299P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a

 9.2. Size:241K  fairchild semi
 fdz291p.pdf pdf_icon

FDZ298N

February 2006 FDZ291P P-Channel 1.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 1.5V specified 4.6 A, 20 V RDS(ON) = 40 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 60 m @ VGS = 2.5 Vpackaging, the FDZ291P minimizes both PCB space RDS(ON) = 160 m @ VGS = 1.5 V and

 9.3. Size:145K  fairchild semi
 fdz294n.pdf pdf_icon

FDZ298N

July 2005 FDZ294N N-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 6 A, 20 V RDS(ON) = 23 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 34 m @ VGS = 2.5 V packaging, the FDZ294N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a Occupies only 2

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Datasheet: FDZ202P , FDZ204P , FDZ206P , FDZ208P , FDZ209N , FDZ291P , FDZ293P , FDZ294N , P0903BDG , FDZ299P , FDZ3N513ZT , FDZ4670 , FDZ4670S , FDZ493P , FDZ5047N , FDZ7064AS , FDZ7064N .

History: FDZ291P

Keywords - FDZ298N MOSFET datasheet

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