FDZ298N
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDZ298N
Marking Code: C
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7
nC
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 165
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027
Ohm
Package: BGA
FDZ298N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDZ298N
Datasheet (PDF)
..1. Size:136K fairchild semi
fdz298n.pdf 
May 2005 FDZ298N N-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 6 A, 20 V RDS(ON) = 27 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 39 m @ VGS = 2.5 V packaging, the FDZ298N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a Occupies only 2.
9.1. Size:208K fairchild semi
fdz299p.pdf
February 2006 FDZ299P P-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 4.6 A, 20 V RDS(ON) = 55 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 80 m @ VGS = 2.5 V packaging, the FDZ299P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a
9.2. Size:241K fairchild semi
fdz291p.pdf
February 2006 FDZ291P P-Channel 1.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 1.5V specified 4.6 A, 20 V RDS(ON) = 40 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 60 m @ VGS = 2.5 Vpackaging, the FDZ291P minimizes both PCB space RDS(ON) = 160 m @ VGS = 1.5 V and
9.3. Size:145K fairchild semi
fdz294n.pdf
July 2005 FDZ294N N-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 6 A, 20 V RDS(ON) = 23 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 34 m @ VGS = 2.5 V packaging, the FDZ294N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a Occupies only 2
9.4. Size:240K fairchild semi
fdz293p.pdf
Feb 2006 FDZ293P P-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 4.6 A, 20 V rDS(on) = 46 m @ VGS = 4.5 V PowerTrench process with state of the art BGA rDS(on) = 72 m @ VGS = 2.5 V packaging, the FDZ293P minimizes both PCB space and rDS(on). This BGA MOSFET embodies a
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