FDZ3N513ZT Specs and Replacement
Type Designator: FDZ3N513ZT
Type of Transistor: NMOS
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 5.5 V
|Id| ⓘ - Maximum Drain Current: 1.1 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Electrical Characteristics
tr ⓘ - Rise Time: 1.9 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.462 Ohm
Package: WL-CSP
FDZ3N513ZT substitution
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FDZ3N513ZT datasheet
fdz3n513zt.pdf
July 2010 FDZ3N513ZT Integrated NMOS and Schottky Diode Features General Description The FDZ3N513ZT is a monolithic NMOS/ Schottky combination Monolithic NMOS and Schottky Diode (FETky) and is designed and wired to function as a discontinu- Ultra-small form factor 1mm x 1mm WLCSP ous conduction mode (DCM) boost LED power train for mobile LED backlighting applications. Max rDS(on)... See More ⇒
Detailed specifications: FDZ206P, FDZ208P, FDZ209N, FDZ291P, FDZ293P, FDZ294N, FDZ298N, FDZ299P, IRF9640, FDZ4670, FDZ4670S, FDZ493P, FDZ5047N, FDZ7064AS, FDZ7064N, FDZ7296, ZDX050N50
Keywords - FDZ3N513ZT MOSFET specs
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