All MOSFET. FDZ3N513ZT Datasheet

 

FDZ3N513ZT Datasheet and Replacement


   Type Designator: FDZ3N513ZT
   Type of Transistor: NMOS
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 5.5 V
   |Id| ⓘ - Maximum Drain Current: 1.1 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   tr ⓘ - Rise Time: 1.9 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.462 Ohm
   Package: WL-CSP
 

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FDZ3N513ZT Datasheet (PDF)

 ..1. Size:336K  fairchild semi
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FDZ3N513ZT

July 2010FDZ3N513ZTIntegrated NMOS and Schottky DiodeFeatures General DescriptionThe FDZ3N513ZT is a monolithic NMOS/ Schottky combination Monolithic NMOS and Schottky Diode(FETky) and is designed and wired to function as a discontinu- Ultra-small form factor 1mm x 1mm WLCSPous conduction mode (DCM) boost LED power train for mobile LED backlighting applications. Max rDS(on)

Datasheet: FDZ206P , FDZ208P , FDZ209N , FDZ291P , FDZ293P , FDZ294N , FDZ298N , FDZ299P , IRF9640 , FDZ4670 , FDZ4670S , FDZ493P , FDZ5047N , FDZ7064AS , FDZ7064N , FDZ7296 , ZDX050N50 .

History: AONS66609T | IRF7815

Keywords - FDZ3N513ZT MOSFET datasheet

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