All MOSFET. FDZ4670S Datasheet

 

FDZ4670S Datasheet and Replacement


   Type Designator: FDZ4670S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 1610 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: FLFBGA3.5X4.0
 

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FDZ4670S Datasheet (PDF)

 ..1. Size:364K  fairchild semi
 fdz4670s.pdf pdf_icon

FDZ4670S

March 2008FDZ4670StmN-Channel PowerTrench SyncFET TM 30V, 25A, 2.4mFeatures General Description Max rDS(on) = 2.4m at VGS = 10V, ID = 25A Combining Fairchild's 30V PowerTrench process with state-of-the-art BGA packaging, the FDZ4670S minimizes both Max rDS(on) = 4.0m at VGS = 4.5V, ID = 19APCB space and rDS(on). This BGA MOSFET embodies a Ultra-thin package: l

 7.1. Size:253K  fairchild semi
 fdz4670.pdf pdf_icon

FDZ4670S

May 2007FDZ4670tmN-Channel PowerTrenchMOSFET BGA 30V, 25A, 2.5mFeatures General Description Max rDS(on) = 2.5m at VGS = 10V, ID = 25A Combining Farichilds 30V PowerTrench process with state-of-the-art BGA packaging, the FDZ4670 minimize both PCB space Max rDS(on) = 4.5m at VGS = 4.5V, ID = 18.5Aand rDS(on) . This BGA MOSFET embodies a breakthrough in Ultra-thin

Datasheet: FDZ209N , FDZ291P , FDZ293P , FDZ294N , FDZ298N , FDZ299P , FDZ3N513ZT , FDZ4670 , EMB04N03H , FDZ493P , FDZ5047N , FDZ7064AS , FDZ7064N , FDZ7296 , ZDX050N50 , ZDX080N50 , ZVN0106A .

History: BRCS045N10SHBD | FDZ7064AS | STT03N10 | IPAN65R650CE | APT50M75JLL | BRCS045N08SHBD | HX3401

Keywords - FDZ4670S MOSFET datasheet

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