FDZ493P Specs and Replacement

Type Designator: FDZ493P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 167 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm

Package: BGA

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FDZ493P datasheet

 ..1. Size:398K  fairchild semi
 fdz493p.pdf pdf_icon

FDZ493P

November 2006 FDZ493P tm P-Channel 2.5V Specified PowerTrench BGA MOSFET 20V, 4.6A, 46m Features General Description Combining Fairchild's advanced 2.5V specified PowerTrench Max rDS(on) = 46m at VGS = 4.5V, ID = 4.6A process with state of the art BGA packaging process, the Max rDS(on) = 72m at VGS = 2.5V, ID = 3.6A FDZ493P minimizes both PCB space a... See More ⇒

Detailed specifications: FDZ291P, FDZ293P, FDZ294N, FDZ298N, FDZ299P, FDZ3N513ZT, FDZ4670, FDZ4670S, K2611, FDZ5047N, FDZ7064AS, FDZ7064N, FDZ7296, ZDX050N50, ZDX080N50, ZVN0106A, ZVN0124ASTOA

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