FDZ5047N Datasheet and Replacement
Type Designator: FDZ5047N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 1144 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: BGA
FDZ5047N substitution
FDZ5047N Datasheet (PDF)
..1. Size:209K fairchild semi
fdz5047n.pdf
fdz5047n.pdf
January 2004 FDZ5047N 30V N-Channel Logic Level PowerTrench BGA MOSFET General Description Features Combining Fairchilds 30V PowerTrench process with 22 A, 30 V. RDS(ON) = 2.9 m @ VGS = 10 V state of the art BGA packaging, the FDZ5047N RDS(ON) = 4.5 m @ VGS = 4.5 V minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging
Datasheet: FDZ293P , FDZ294N , FDZ298N , FDZ299P , FDZ3N513ZT , FDZ4670 , FDZ4670S , FDZ493P , AO3407 , FDZ7064AS , FDZ7064N , FDZ7296 , ZDX050N50 , ZDX080N50 , ZVN0106A , ZVN0124ASTOA , ZVN0124ASTOB .
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