FDZ5047N Specs and Replacement
Type Designator: FDZ5047N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 1144 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: BGA
FDZ5047N substitution
- MOSFET ⓘ Cross-Reference Search
FDZ5047N datasheet
fdz5047n.pdf
January 2004 FDZ5047N 30V N-Channel Logic Level PowerTrench BGA MOSFET General Description Features Combining Fairchild s 30V PowerTrench process with 22 A, 30 V. RDS(ON) = 2.9 m @ VGS = 10 V state of the art BGA packaging, the FDZ5047N RDS(ON) = 4.5 m @ VGS = 4.5 V minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging ... See More ⇒
Detailed specifications: FDZ293P, FDZ294N, FDZ298N, FDZ299P, FDZ3N513ZT, FDZ4670, FDZ4670S, FDZ493P, EMB04N03H, FDZ7064AS, FDZ7064N, FDZ7296, ZDX050N50, ZDX080N50, ZVN0106A, ZVN0124ASTOA, ZVN0124ASTOB
Keywords - FDZ5047N MOSFET specs
FDZ5047N cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IRF7807VD1
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