FDZ7064AS Specs and Replacement
Type Designator: FDZ7064AS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 570 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
Package: BGA
FDZ7064AS substitution
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FDZ7064AS datasheet
fdz7064as.pdf
December 2004 FDZ7064AS 30V N-Channel PowerTrench SyncFET BGA MOSFET Features General Description 13.5 A, 30 V. RDS(ON) = 5.6 m @ VGS = 10 V This MOSFET is designed to replace a single MOSFET and RDS(ON) = 7.1 m @ VGS = 4.5 V parallel Schottky diode in synchronous DC DC power supplies. Combining Fairchild s 30V PowerTrench SyncFET process with Occupies only 14 mm2 of... See More ⇒
fdz7064n.pdf
May 2004 FDZ7064N 30V N-Channel Logic Level PowerTrench BGA MOSFET General Description Features Combining Fairchild s 30V PowerTrench process with 13.5 A, 30 V. RDS(ON) = 8.0 m @ VGS = 4.5 V state of the art BGA packaging, the FDZ7064N minimizes both PCB space and RDS(ON). This BGA RDS(ON) = 7.0 m @ VGS = 10 V MOSFET embodies a breakthrough in packaging technol... See More ⇒
Detailed specifications: FDZ294N, FDZ298N, FDZ299P, FDZ3N513ZT, FDZ4670, FDZ4670S, FDZ493P, FDZ5047N, RU7088R, FDZ7064N, FDZ7296, ZDX050N50, ZDX080N50, ZVN0106A, ZVN0124ASTOA, ZVN0124ASTOB, ZVN0124ASTZ
Keywords - FDZ7064AS MOSFET specs
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