ZDX080N50 Datasheet and Replacement
Type Designator: ZDX080N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 98 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-220FM
ZDX080N50 substitution
ZDX080N50 Datasheet (PDF)
zdx080n50.pdf

ZDX080N50 Nch 500V 8A Power MOSFET DatasheetlOutlineVDSS500V TO-220FMRDS(on) (Max.)0.85W(3) ID8A(2) (1) PD40WlFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead
Datasheet: FDZ4670 , FDZ4670S , FDZ493P , FDZ5047N , FDZ7064AS , FDZ7064N , FDZ7296 , ZDX050N50 , IRFB7545 , ZVN0106A , ZVN0124ASTOA , ZVN0124ASTOB , ZVN0124ASTZ , ZVN0540ASTOA , ZVN0540ASTOB , ZVN0540ASTZ , ZVN0545ASTOA .
History: FDZ7296
Keywords - ZDX080N50 MOSFET datasheet
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History: FDZ7296



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