ZDX080N50 Specs and Replacement

Type Designator: ZDX080N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 98 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-220FM

ZDX080N50 substitution

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ZDX080N50 datasheet

 ..1. Size:494K  rohm
 zdx080n50.pdf pdf_icon

ZDX080N50

ZDX080N50 Nch 500V 8A Power MOSFET Datasheet lOutline VDSS 500V TO-220FM RDS(on) (Max.) 0.85W (3) ID 8A (2) (1) PD 40W lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead... See More ⇒

Detailed specifications: FDZ4670, FDZ4670S, FDZ493P, FDZ5047N, FDZ7064AS, FDZ7064N, FDZ7296, ZDX050N50, 60N06, ZVN0106A, ZVN0124ASTOA, ZVN0124ASTOB, ZVN0124ASTZ, ZVN0540ASTOA, ZVN0540ASTOB, ZVN0540ASTZ, ZVN0545ASTOA

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.