IRFPE52 Specs and Replacement

Type Designator: IRFPE52

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Id| ⓘ - Maximum Drain Current: 7.2 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-247AC

IRFPE52 substitution

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IRFPE52 datasheet

 8.1. Size:852K  international rectifier
irfpe50.pdf pdf_icon

IRFPE52

PD - 94845 IRFPE50PbF Lead-Free 11/14/03 Document Number 91248 www.vishay.com 1 IRFPE50PbF Document Number 91248 www.vishay.com 2 IRFPE50PbF Document Number 91248 www.vishay.com 3 IRFPE50PbF Document Number 91248 www.vishay.com 4 IRFPE50PbF Document Number 91248 www.vishay.com 5 IRFPE50PbF Document Number 91248 www.vishay.com 6 IRFPE50PbF TO-247AC Package O... See More ⇒

 8.2. Size:1575K  vishay
irfpe50pbf.pdf pdf_icon

IRFPE52

IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 200 COMPLIANT Fast Switching Qgs (nC) 24 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements Complian... See More ⇒

 8.3. Size:1610K  vishay
irfpe50 sihfpe50.pdf pdf_icon

IRFPE52

IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.2 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 200 COMPLIANT Fast Switching Qgs (nC) 24 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements Complian... See More ⇒

Detailed specifications: IRFPC60PBF, IRFPE20, IRFPE22, IRFPE30PBF, IRFPE32, IRFPE40PBF, IRFPE42, IRFPE50PBF, IRFP250N, IRFPF20, IRFPF22, IRFPF30PBF, IRFPF32, IRFPF40PBF, IRFPF42, IRFPF52, IRFPG20

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