IRFPG32
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFPG32
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000
V
|Id|ⓘ - Maximum Drain Current: 2.5
A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.7
Ohm
Package:
TO-247AC
IRFPG32
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFPG32
Datasheet (PDF)
8.2. Size:1749K international rectifier
irfpg30pbf.pdf
PD- 95718IRFPG30PbF Lead-Free8/3/04Document Number: 91252 www.vishay.com1IRFPG30PbFDocument Number: 91252 www.vishay.com2IRFPG30PbFDocument Number: 91252 www.vishay.com3IRFPG30PbFDocument Number: 91252 www.vishay.com4IRFPG30PbFDocument Number: 91252 www.vishay.com5IRFPG30PbFDocument Number: 91252 www.vishay.com6IRFPG30PbFPeak Diode Recovery d
8.3. Size:1740K vishay
irfpg30pbf sihfpg30.pdf
IRFPG30, SiHFPG30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 5.0RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 80 COMPLIANT Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Complian
8.4. Size:1733K vishay
irfpg30 sihfpg30.pdf
IRFPG30, SiHFPG30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 5.0RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 80 COMPLIANT Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Complian
8.5. Size:1738K infineon
irfpg30 sihfpg30.pdf
IRFPG30, SiHFPG30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 5.0RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 80 COMPLIANT Fast SwitchingQgs (nC) 10 Ease of ParallelingQgd (nC) 42 Simple Drive RequirementsConfiguration Single Complian
Datasheet: WPB4002
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