ZVP3306ASTOB MOSFET. Datasheet pdf. Equivalent
Type Designator: ZVP3306ASTOB
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 0.16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 25 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm
Package: TO-92
ZVP3306ASTOB Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZVP3306ASTOB Datasheet (PDF)
zvp3306astoa zvp3306astob.pdf
P-CHANNEL ENHANCEMENTZVP3306AMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD VGS=D -16V -14V-12VD-10VE-Line-9V-8V TO92 Compatible-7VABSOLUTE MAXIMUM RATINGS.-6V T V IT-5V-4.5VD i V I VD V8 -10 i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I
zvp3306a.pdf
P-CHANNEL ENHANCEMENTZVP3306AMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD VGS=D -16V -14V-12VD-10VE-Line-9V-8V TO92 Compatible-7VABSOLUTE MAXIMUM RATINGS.-6V T V IT-5V-4.5VD i V I VD V8 -10 i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I
zvp3306fta zvp3306ftc.pdf
SOT23 P-CHANNEL ENHANCEMENT6F ZVP3306FMODE VERTICAL DMOS FETISSUE 3 JANUARY 1996 T V I VD DS V D V V T I D T I VG T T V V V 8VSOT23 VABSOLUTE MAXIMUM RATINGS. V T V IT V VD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I
zvp3306f.pdf
SOT23 P-CHANNEL ENHANCEMENT6F ZVP3306FMODE VERTICAL DMOS FETISSUE 3 JANUARY 1996 T V I VD DS V D V V T I D T I VG T T V V V 8VSOT23 VABSOLUTE MAXIMUM RATINGS. V T V IT V VD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I
zvp3306fta.pdf
ZVP3306FTAwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () VGS(th) (V) ID (mA)Definition TrenchFET Power MOSFET- 60 3 at VGS = - 10 V - 1 to - 3 -500 High-Side Switching Low On-Resistance: 3 Low Threshold: - 2 V (typ.) Fast Swtiching Speed: 20 ns (typ.) Lo
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SUD80460E | SUN50A20CI
History: SUD80460E | SUN50A20CI
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918