ZXMN3A01FTC Datasheet. Specs and Replacement
Type Designator: ZXMN3A01FTC 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.3 nS
Cossⓘ - Output Capacitance: 38 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: SOT-23
ZXMN3A01FTC substitution
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ZXMN3A01FTC datasheet
zxmn3a01f.pdf
Product specification ZXMN3A01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0A DESCRIPTION This new generation of TRENCH MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 ... See More ⇒
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