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ZXMN3A01FTC Spec and Replacement


   Type Designator: ZXMN3A01FTC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.3 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT-23

 ZXMN3A01FTC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMN3A01FTC Specs

 ..1. Size:191K  zetex
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ZXMN3A01FTC

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ZXMN3A01FTC

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 5.1. Size:193K  diodes
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 5.2. Size:104K  tysemi
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ZXMN3A01FTC

Product specification ZXMN3A01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0A DESCRIPTION This new generation of TRENCH MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 ... See More ⇒

Detailed specifications: ZXMN2B03E6TA , ZXMN2B14FHTA , ZXMN2F30FHTA , ZXMN2F34FHTA , ZXMN2F34MATA , ZXMN3A01E6TA , ZXMN3A01E6TC , ZXMN3A01FTA , RFP50N06 , ZXMN3A01Z , ZXMN3A02N8TA , ZXMN3A02X8TA , ZXMN3A02X8TC , ZXMN3A03E6TA , ZXMN3A03E6TC , ZXMN3A04KTC , ZXMN3A14FTA .

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