ZXMNS3BM832TA PDF and Equivalents Search

 

ZXMNS3BM832TA Specs and Replacement

Type Designator: ZXMNS3BM832TA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.72 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.5 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: MLP832

ZXMNS3BM832TA substitution

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ZXMNS3BM832TA datasheet

 ..1. Size:124K  zetex
 zxmns3bm832ta.pdf pdf_icon

ZXMNS3BM832TA

ZXMNS3BM832 MPPS Miniature Package Power Solutions 30V N Channel MOSFET & 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY N Channel MOSFET--- V(BR)DSS =30V; RSAT(on) =0.18 ; = 2.7A D Schottky Diode --- VR = 40V; VF = 500mV (@1A); IC=1A DESCRIPTION Packaged in the new innovation 3mm x 2mm MLP this combination dual product comprises a low gate drive, low on-resistance N-Channel MOSFE... See More ⇒

Detailed specifications: ZXMN6A09KTC, ZXMN6A11GTA, ZXMN6A11GTC, ZXMN6A11ZTA, ZXMN6A25GTA, ZXMN6A25KTC, ZXMN7A11GTA, ZXMN7A11KTC, IRF730, ZXMP10A13FTA, ZXMP10A16KTC, ZXMP10A17E6Q, ZXMP10A17E6TA, ZXMP10A18GTA, ZXMP10A18KTC, ZXMP2120E5TA, ZXMP2120FFTA

Keywords - ZXMNS3BM832TA MOSFET specs

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