SI1002R Specs and Replacement
Type Designator: SI1002R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.22 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.61 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 9 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.56 Ohm
Package: SC-75A
SI1002R substitution
- MOSFET ⓘ Cross-Reference Search
SI1002R datasheet
si1002r.pdf
Si1002R www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) 100 % Rg tested 0.560 at VGS = 4.5 V 0.5 Gate-source ESD protected 1000 V 0.620 at VGS = 2.5 V 0.2 30 0.72 nC Material categorization 0.700 at VGS = 1.8 V 0.2 For definitions of compliance please see 1.... See More ⇒
psi100-06.pdf
TM ECO-PAC 2 PSIG 100/06 IGBT Module IC25 = 93 A PSI 100/06* VCES = 600 V Preliminary Data Sheet PSIS 100/06* VCE(sat)typ.= 2.4 V PSSI 100/06* X15 AC 1 IK 10 OP 9 NTC L9 X13 L9 E2 E2 T16 GH 10 NTC X16 X15 X15 L9 K10 F1 X16 NTC VX 18 IK 10 AC 1 X16 PSIS 100/06* PSSI 100/06* PSI 100/06* IGBTs LMN S A IJK Symbol Conditions Maximum Ratings VCES TVJ = 25 C to 150... See More ⇒
pssi100-06.pdf
TM ECO-PAC 2 PSIG 100/06 IGBT Module IC25 = 93 A PSI 100/06* VCES = 600 V Preliminary Data Sheet PSIS 100/06* VCE(sat)typ.= 2.4 V PSSI 100/06* X15 AC 1 IK 10 OP 9 NTC L9 X13 L9 E2 E2 T16 GH 10 NTC X16 X15 X15 L9 K10 F1 X16 NTC VX 18 IK 10 AC 1 X16 PSIS 100/06* PSSI 100/06* PSI 100/06* IGBTs LMN S A IJK Symbol Conditions Maximum Ratings VCES TVJ = 25 C to 150... See More ⇒
pssi100-12.pdf
ECO-PACTM 2 PSIG 100/12 IGBT Module IC25 = 138 A PSIS 100/12* VCES = 1200 V Short Circuit SOA Capability PSSI 100/12* Square RBSOA VCE(sat)typ.= 2.8 V Preliminary Data Sheet X15 AC 1 IK 10 NTC LMN S A IJK L9 T16 X16 X15 L9 F1 NTC IK 10 AC 1 X16 PSIG 100/12 PSIS 100/12* PSSI 100/12* IGBTs *NTC optional Symbol Conditions Maximum Ratings VCES TVJ = 25 C to 150 C 120... See More ⇒
Detailed specifications: ZXMS6004FFQ , ZXMS6004SGQ , ZXMS6005DGQ , ZXMS6005DT8Q , ZXMS6005SGQ , ZXMS6006DGQ , ZXMS6006DT8Q , ZXMS6006SGQ , K4145 , SI1011X , SI1012CR , SI1012R , SI1012X , SI1013CX , SI1013R , SI1013X , SI1016CX .
Keywords - SI1002R MOSFET specs
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