All MOSFET. SI1002R Datasheet

 

SI1002R Datasheet and Replacement


   Type Designator: SI1002R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.22 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.61 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.56 Ohm
   Package: SC-75A
 

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SI1002R Datasheet (PDF)

 ..1. Size:188K  vishay
 si1002r.pdf pdf_icon

SI1002R

Si1002Rwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) 100 % Rg tested0.560 at VGS = 4.5 V 0.5 Gate-source ESD protected: 1000 V0.620 at VGS = 2.5 V 0.230 0.72 nC Material categorization:0.700 at VGS = 1.8 V 0.2For definitions of compliance please see1.

 9.1. Size:173K  powersem
 psi100-06.pdf pdf_icon

SI1002R

TMECO-PAC 2PSIG 100/06IGBT Module IC25 = 93 APSI 100/06*VCES = 600 VPreliminary Data SheetPSIS 100/06*VCE(sat)typ.= 2.4 VPSSI 100/06*X15AC 1IK 10OP 9NTCL9X13 L9E2E2T16GH 10 NTC X16X15X15 L9K10F1X16NTCVX 18 IK 10AC 1X16PSIS 100/06*PSSI 100/06*PSI 100/06*IGBTsLMN S A IJKSymbol Conditions Maximum RatingsVCES TVJ = 25C to 150

 9.2. Size:173K  powersem
 pssi100-06.pdf pdf_icon

SI1002R

TMECO-PAC 2PSIG 100/06IGBT Module IC25 = 93 APSI 100/06*VCES = 600 VPreliminary Data SheetPSIS 100/06*VCE(sat)typ.= 2.4 VPSSI 100/06*X15AC 1IK 10OP 9NTCL9X13 L9E2E2T16GH 10 NTC X16X15X15 L9K10F1X16NTCVX 18 IK 10AC 1X16PSIS 100/06*PSSI 100/06*PSI 100/06*IGBTsLMN S A IJKSymbol Conditions Maximum RatingsVCES TVJ = 25C to 150

 9.3. Size:171K  powersem
 pssi100-12.pdf pdf_icon

SI1002R

ECO-PACTM 2PSIG 100/12IGBT Module IC25 = 138 APSIS 100/12*VCES = 1200 VShort Circuit SOA CapabilityPSSI 100/12*Square RBSOAVCE(sat)typ.= 2.8 VPreliminary Data SheetX15AC 1IK 10NTCLMN S A IJKL9T16X16X15L9F1NTCIK 10AC 1X16PSIG 100/12 PSIS 100/12*PSSI 100/12*IGBTs*NTC optionalSymbol Conditions Maximum RatingsVCES TVJ = 25C to 150C 120

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Datasheet: ZXMS6004FFQ , ZXMS6004SGQ , ZXMS6005DGQ , ZXMS6005DT8Q , ZXMS6005SGQ , ZXMS6006DGQ , ZXMS6006DT8Q , ZXMS6006SGQ , IRFB3607 , SI1011X , SI1012CR , SI1012R , SI1012X , SI1013CX , SI1013R , SI1013X , SI1016CX .

History: SI1433DH | SVS7N60FJD2 | CSFR3N60F | SSF2610E | HM120N04I | TPCA8027-H | NCE85H25

Keywords - SI1002R MOSFET datasheet

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