SI1002R - параметры транзистора MOSFET, его аналоги, datasheet

SI1002R Datasheet (PDF)

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Si1002Rwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) 100 % Rg tested0.560 at VGS = 4.5 V 0.5 Gate-source ESD protected: 1000 V0.620 at VGS = 2.5 V 0.230 0.72 nC Material categorization:0.700 at VGS = 1.8 V 0.2For definitions of compliance please see1.

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TMECO-PAC 2PSIG 100/06IGBT Module IC25 = 93 APSI 100/06*VCES = 600 VPreliminary Data SheetPSIS 100/06*VCE(sat)typ.= 2.4 VPSSI 100/06*X15AC 1IK 10OP 9NTCL9X13 L9E2E2T16GH 10 NTC X16X15X15 L9K10F1X16NTCVX 18 IK 10AC 1X16PSIS 100/06*PSSI 100/06*PSI 100/06*IGBTsLMN S A IJKSymbol Conditions Maximum RatingsVCES TVJ = 25C to 150

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ECO-PACTM 2PSIG 100/12IGBT Module IC25 = 138 APSIS 100/12*VCES = 1200 VShort Circuit SOA CapabilityPSSI 100/12*Square RBSOAVCE(sat)typ.= 2.8 VPreliminary Data SheetX15AC 1IK 10NTCLMN S A IJKL9T16X16X15L9F1NTCIK 10AC 1X16PSIG 100/12 PSIS 100/12*PSSI 100/12*IGBTs*NTC optionalSymbol Conditions Maximum RatingsVCES TVJ = 25C to 150C 120

Другие MOSFET... ZXMS6004FFQ , ZXMS6004SGQ , ZXMS6005DGQ , ZXMS6005DT8Q , ZXMS6005SGQ , ZXMS6006DGQ , ZXMS6006DT8Q , ZXMS6006SGQ , IRFB3607 , SI1011X , SI1012CR , SI1012R , SI1012X , SI1013CX , SI1013R , SI1013X , SI1016CX .