SI1040X MOSFET. Datasheet pdf. Equivalent
Type Designator: SI1040X
Marking Code: P*
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 0.147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 0.43 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.625 Ohm
Package: SC-89-6
SI1040X Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI1040X Datasheet (PDF)
si1040x.pdf
Si1040XVishay SiliconixLoad Switch with Level-ShiftFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS2 (V) RDS(on) ()ID (A)Definition0.625 at VIN = 4.5 V 0.43 TrenchFET Power MOSFET0.890 at VIN = 2.5 V 1.8 to 8 0.36 1.8 V to 8 V Input1.25 at VIN = 1.8 V 0.3 1.5 V to 8 V Logic Level Control Smallest LITTLE FOOT
si1046r.pdf
Si1046RVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.420 at VGS = 4.5 V 0.606 TrenchFET Power MOSFET: 1.8 V Rated20 0.501 at VGS = 2.5 V 0.505 0.92 ESD Protected: 2000 V0.660 at VGS = 1.8 V 0.15 Compliant to RoHS Directive 2002/95/ECAPPL
si1046x.pdf
New ProductSi1046XVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.420 at VGS = 4.5 V TrenchFET Power MOSFET: 1.8 V Rated0.606 ESD Protected: 2000 V0.501 at VGS = 2.5 V 20 0.505 0.92 Compliant to RoHS Directive 2002/95/EC0.660 at VGS = 1.
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRFU540ZPBF
History: IRFU540ZPBF
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918