IRFR9012
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFR9012
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 4.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.1
nC
trⓘ - Rise Time: 47
nS
Cossⓘ -
Output Capacitance: 160
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7
Ohm
Package:
TO252
IRFR9012
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFR9012
Datasheet (PDF)
7.1. Size:1864K international rectifier
irfr9014pbf irfu9014pbf.pdf 
PD- 95383AIRFR9014PbFIRFU9014PbF Lead-Free12/07/04Document Number: 91277 www.vishay.com1IRFR/U9014PbFDocument Number: 91277 www.vishay.com2IRFR/U9014PbFDocument Number: 91277 www.vishay.com3IRFR/U9014PbFDocument Number: 91277 www.vishay.com4IRFR/U9014PbFDocument Number: 91277 www.vishay.com5IRFR/U9014PbFDocument Number: 91277 www.vishay.com6I
7.3. Size:247K vishay
irfr9010pbf.pdf
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface Mountable (Order as IRFR9010,VDS (V) - 50 SiHFR9010) Straight Lead Option (Order as IRFU9010,RDS(on) ()VGS = - 10 V 0.50SiHFU9010)Qg (Max.) (nC) 9.1 Repetitive Avalanche Ratings Qgs (nC) 3.0 Dynamic dV/dt Rating Simple Drive Requiremen
7.4. Size:1117K vishay
irfr9014pbf irfu9014pbf sihfr9014 sihfu9014.pdf
IRFR9014, IRFU9014, SiHFR9014, SiHFU9014www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche Rated Surface Mount (IRFR9014, SiHFR9014)RDS(on) ()VGS = - 10 V 0.50 Straight Lead (IRFU9014, SiHFU9014)Qg (Max.) (nC) 12 Available in Tape and ReelQgs (nC) 3.8 P-Channel Fast Switch
7.5. Size:1365K vishay
irfr9010 irfu9010 sihfr9010 sihfu9010.pdf
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 50 Surface Mountable (Order as IRFR9010, SiHFR9010)RDS(on) ()VGS = - 10 V 0.50 Straight Lead Option (Order as IRFU9010, SiHFU9010) Repetitive Avalanche Ratings Qg (Max.) (nC) 9.1 Dynamic dV/dt RatingQ
7.6. Size:1891K vishay
irfr9014 irfu9014 sihfr9014 sihfu9014 2.pdf
IRFR9014, IRFU9014, SiHFR9014, SiHFU9014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 60 Definition Dynamic dV/dt RatingRDS(on) ()VGS = - 10 V 0.50 Repetitive Avalanche RatedQg (Max.) (nC) 12 Surface Mount (IRFR9014, SiHFR9014)Qgs (nC) 3.8 Straight Lead (IRFU9014, SiHFU9014) Available in Tape
7.7. Size:2009K vishay
irfr9014 irfu9014 sihfr9014 sihfu9014.pdf
IRFR9014, IRFU9014, SiHFR9014, SiHFU9014Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* Surface Mount (IRFR9014/SiHFR9014)COMPLIANTQg (Max.) (nC) 12 Straight Lead (IRFU9014/SiHFU9014)Qgs (nC) 3.8 Available in Tape and ReelQgd (nC) 5.1
7.8. Size:1473K cn vbsemi
irfr9014tr.pdf
IRFR9014TRwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Sy
7.9. Size:1473K cn vbsemi
irfr9010tr.pdf
IRFR9010TRwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Sy
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