SI1056X PDF and Equivalents Search

 

SI1056X Specs and Replacement

Type Designator: SI1056X

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.236 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.32 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.089 Ohm

Package: SC-89

SI1056X substitution

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SI1056X datasheet

 ..1. Size:119K  vishay
 si1056x.pdf pdf_icon

SI1056X

Si1056X Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.089 at VGS = 4.5 V 1.32 TrenchFET Power MOSFET 100 % Rg Tested 0.098 at VGS = 2.5 V 1.26 20 5.2 Compliant to RoHS Directive 2002/95/EC 0.121 at VGS = 1.8 V 1.13 APPLICATIONS Load Swit... See More ⇒

 9.1. Size:122K  vishay
 si1051x.pdf pdf_icon

SI1056X

Si1051X Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.122 at VGS = - 4.5 V 1.2 TrenchFET Power MOSFET 0.141 at VGS = - 2.5 V 1.1 100 % Rg Tested - 8 5.91 0.168 at VGS = - 1.8 V 0.60 Compliant to RoHS Directive 2002/95/EC 0.198 at VGS = - 1.5... See More ⇒

 9.2. Size:136K  vishay
 si1054x.pdf pdf_icon

SI1056X

Si1054X Vishay Siliconix N-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.095 at VGS = 4.5 V 1.32 TrenchFET Power MOSFET 12 0.104 at VGS = 2.5 V 1.26 5.25 100 % Rg Tested 0.114 at VGS = 1.8 V 0.88 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Swi... See More ⇒

 9.3. Size:121K  vishay
 si1050x.pdf pdf_icon

SI1056X

Si1050X Vishay Siliconix N-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.086 at VGS = 4.5 V 1.34a TrenchFET Power MOSFET 100 % Rg Tested 0.093 at VGS = 2.5 V 1.29 8 7.1 Compliant to RoHS Directive 2002/95/EC 0.102 at VGS = 1.8 V 1.23 0.120 at VGS = 1.5 V ... See More ⇒

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Detailed specifications: SI1037X, SI1039X, SI1040X, SI1046R, SI1046X, SI1050X, SI1051X, SI1054X, 2N60, SI1058X, SI1062X, SI1065X, SI1067X, SI1069X, SI1070X, SI1071X, SI1072X

Keywords - SI1056X MOSFET specs

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