SI1062X MOSFET Datasheet: N-Ch, 20V, 0.53A. Full specification with pinout and replacement list

SI1062X Specs and Replacement

Type Designator: SI1062X

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.22 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.53 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 14 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm

Package: SC-89

SI1062X substitution

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SI1062X datasheet

..1. Size:154K vishay
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New Product Si1062X Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Gate-Source ESD Protected 1000 V 0.420 at VGS = 4.5 V 0.5 Material categorization For definitions of compliance please see 0.492 at VGS = 2.5 V 0.2 www.vishay.com/doc?99912 20 1 nC 0.597 at VGS = 1.8 V 0.2 ... See More ⇒

9.1. Size:142K vishay
si1065x.pdf pdf_icon

Si1065X Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) 100 % Rg Tested 0.156 at VGS = - 4.5 V Material categorization 1.18 For definitions of compliance please see 0.190 at VGS = - 2.5V - 12 1.07 6.7 nC www.vishay.com/doc?99912 0.245 at VGS = - 1.8V 0.49 APPLICATIONS Loa... See More ⇒

9.2. Size:121K vishay
si1069x.pdf pdf_icon

Si1069X Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.184 at VGS = - 4.5 V - 0.94 TrenchFET Power MOSFET - 20 4.23 0.268 at VGS = - 2.5 V - 0.78 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable ... See More ⇒

9.3. Size:120K vishay
si1067x.pdf pdf_icon

Si1067X Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.150 at VGS = - 4.5 V 1.06 TrenchFET Power MOSFET - 20 0.166 at VGS = - 2.5V 1.0 6.0 100 % Rg Tested 0.214 at VGS = - 1.8V 0.49 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load ... See More ⇒

Detailed specifications: SI1040X, SI1046R, SI1046X, SI1050X, SI1051X, SI1054X, SI1056X, SI1058X, P60NF06, SI1065X, SI1067X, SI1069X, SI1070X, SI1071X, SI1072X, SI1073X, SI1077X