SI1062X - параметры транзистора MOSFET, его аналоги, datasheet

SI1062X Datasheet (PDF)

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New Product Si1062XVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) Gate-Source ESD Protected: 1000 V0.420 at VGS = 4.5 V 0.5 Material categorization:For definitions of compliance please see0.492 at VGS = 2.5 V 0.2www.vishay.com/doc?9991220 1 nC0.597 at VGS = 1.8 V 0.2

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si1065x.pdf pdf_icon

Si1065XVishay SiliconixP-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100 % Rg Tested0.156 at VGS = - 4.5 V Material categorization:1.18For definitions of compliance please see0.190 at VGS = - 2.5V - 12 1.07 6.7 nCwww.vishay.com/doc?999120.245 at VGS = - 1.8V 0.49APPLICATIONS Loa

9.2. Size:121K vishay
si1069x.pdf pdf_icon

Si1069XVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.184 at VGS = - 4.5 V - 0.94 TrenchFET Power MOSFET- 20 4.230.268 at VGS = - 2.5 V - 0.78 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable

9.3. Size:120K vishay
si1067x.pdf pdf_icon

Si1067XVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.150 at VGS = - 4.5 V 1.06 TrenchFET Power MOSFET- 20 0.166 at VGS = - 2.5V 1.0 6.0 100 % Rg Tested0.214 at VGS = - 1.8V 0.49 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .