SI1317DL PDF and Equivalents Search

 

SI1317DL Specs and Replacement

Type Designator: SI1317DL

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: SOT-323

SI1317DL substitution

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SI1317DL datasheet

 ..1. Size:242K  vishay
 si1317dl.pdf pdf_icon

SI1317DL

New Product Si1317DL Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)c Qg (Typ.) Definition 0.150 at VGS = - 4.5 V - 1.4 TrenchFET Power MOSFET - 20 0.192 at VGS = - 2.5 V - 1.3 4.3 nC 100 % Rg Tested 0.270 at VGS = - 1.8 V - 1.1 Compliant to RoHS Directive 2002/95/EC ... See More ⇒

 9.1. Size:242K  vishay
 si1315dl.pdf pdf_icon

SI1317DL

New Product Si1315DL Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) RDS(on) ( )ID (A)c Qg (Typ.) TrenchFET Power MOSFET 0.336 at VGS = - 4.5 V - 0.9 100 % Rg Tested - 8 0.450 at VGS = - 2.5 V - 0.7 1 nC Compliant to RoHS Directive 2002/95/EC 0.650 at VGS = - 1.8 V - 0.5 APP... See More ⇒

Detailed specifications: SI1303DL, SI1304BDL, SI1305DL, SI1305EDL, SI1307DL, SI1307EDL, SI1308EDL, SI1315DL, 60N06, SI1330EDL, SI1400DL, SI1401EDH, SI1402DH, SI1403BDL, SI1403CDL, SI1404BDH, SI1405BDH

Keywords - SI1317DL MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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