All MOSFET. SI1330EDL Datasheet

 

SI1330EDL Datasheet and Replacement


   Type Designator: SI1330EDL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: SOT-323
 

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SI1330EDL Datasheet (PDF)

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SI1330EDL

Si1330EDLVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition2.5 at VGS = 10 V 0.25 TrenchFET Power MOSFET60 3 at VGS = 4.5 V 0.23 ESD Protected: 2000 V8 at VGS = 3 V 0.05 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS P-Channel Driver- Notebook P

Datasheet: SI1304BDL , SI1305DL , SI1305EDL , SI1307DL , SI1307EDL , SI1308EDL , SI1315DL , SI1317DL , 5N50 , SI1400DL , SI1401EDH , SI1402DH , SI1403BDL , SI1403CDL , SI1404BDH , SI1405BDH , SI1405DL .

History: IXFH50N85X | SWP058R65E7T | AP3A010MT | BUK9629-100B | 2SK1691 | AP40T10GI-HF | RQ3E080BN

Keywords - SI1330EDL MOSFET datasheet

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