SI1330EDL MOSFET. Datasheet pdf. Equivalent
Type Designator: SI1330EDL
Marking Code: KD*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 0.24 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 0.4 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: SOT-323
SI1330EDL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI1330EDL Datasheet (PDF)
si1330edl.pdf
Si1330EDLVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition2.5 at VGS = 10 V 0.25 TrenchFET Power MOSFET60 3 at VGS = 4.5 V 0.23 ESD Protected: 2000 V8 at VGS = 3 V 0.05 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS P-Channel Driver- Notebook P
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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