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SI1330EDL Specs and Replacement

Type Designator: SI1330EDL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: SOT-323

SI1330EDL substitution

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SI1330EDL datasheet

 ..1. Size:93K  vishay
 si1330edl.pdf pdf_icon

SI1330EDL

Si1330EDL Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 2.5 at VGS = 10 V 0.25 TrenchFET Power MOSFET 60 3 at VGS = 4.5 V 0.23 ESD Protected 2000 V 8 at VGS = 3 V 0.05 Compliant to RoHS Directive 2002/95/EC APPLICATIONS P-Channel Driver - Notebook P... See More ⇒

Detailed specifications: SI1304BDL, SI1305DL, SI1305EDL, SI1307DL, SI1307EDL, SI1308EDL, SI1315DL, SI1317DL, IRFP064N, SI1400DL, SI1401EDH, SI1402DH, SI1403BDL, SI1403CDL, SI1404BDH, SI1405BDH, SI1405DL

Keywords - SI1330EDL MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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