SI1330EDL Datasheet and Replacement
Type Designator: SI1330EDL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: SOT-323
SI1330EDL substitution
SI1330EDL Datasheet (PDF)
si1330edl.pdf

Si1330EDLVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition2.5 at VGS = 10 V 0.25 TrenchFET Power MOSFET60 3 at VGS = 4.5 V 0.23 ESD Protected: 2000 V8 at VGS = 3 V 0.05 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS P-Channel Driver- Notebook P
Datasheet: SI1304BDL , SI1305DL , SI1305EDL , SI1307DL , SI1307EDL , SI1308EDL , SI1315DL , SI1317DL , 5N50 , SI1400DL , SI1401EDH , SI1402DH , SI1403BDL , SI1403CDL , SI1404BDH , SI1405BDH , SI1405DL .
History: NDT18N06 | SI1317DL | SML50H19 | PHP10N60E | KU2303D | PHP125N06LT | SMK2050CI
Keywords - SI1330EDL MOSFET datasheet
SI1330EDL cross reference
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History: NDT18N06 | SI1317DL | SML50H19 | PHP10N60E | KU2303D | PHP125N06LT | SMK2050CI



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