2N7275H MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N7275H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 5 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm
Package: TO205AF
2N7275H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N7275H Datasheet (PDF)
4.1. jansr2n7275.pdf 
Size:45K _intersil
JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 5A, 200V, rDS(ON) = 0.500Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- • Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets Pre
5.1. jansr2n7272.pdf Size:45K _intersil
JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 8A, 100V, rDS(ON) = 0.180Ω The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- • Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets Pre
5.2. jansr2n7278.pdf Size:45K _intersil
JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 4A, 250V, rDS(ON) = 0.700Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- • Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets Pre
Datasheet: 2N7272H3 , 2N7272H4 , 2N7272R , 2N7272R1 , 2N7272R2 , 2N7272R3 , 2N7272R4 , 2N7275D , BS170 , 2N7275R , 2SJ128 , 2SJ132 , 2SJ133 , 2SJ134 , 2SJ135 , 2SJ136 , 2SJ137 .
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