SI1450DH Datasheet and Replacement
Type Designator: SI1450DH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 4.53 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 73 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
Package: SOT-363
SI1450DH substitution
SI1450DH Datasheet (PDF)
si1450dh.pdf

Si1450DHVishay SiliconixN-Channel 8 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.047 at VGS = 4.5 V 4.0a TrenchFET Power MOSFET: 1.5 V Rated0.051 at VGS = 2.5 V 4.0a 100 % Rg Tested8 4.24 nC0.058 at VGS = 1.8 V 4.0a Compliant to RoHS Directive 2002/95/EC0.069 at VGS
Datasheet: SI1426DH , SI1427EDH , SI1428EDH , SI1431DH , SI1433DH , SI1441EDH , SI1442DH , SI1443EDH , STP75NF75 , SI1467DH , SI1469DH , SI1470DH , SI1471DH , SI1473DH , SI1480DH , SI1488DH , SI1489EDH .
History: HCP20NT60V
Keywords - SI1450DH MOSFET datasheet
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History: HCP20NT60V



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