All MOSFET. SI1499DH Datasheet

 

SI1499DH MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI1499DH
   Marking Code: BI*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.8 V
   |Id|ⓘ - Maximum Drain Current: 1.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.6 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
   Package: SOT-363

 SI1499DH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI1499DH Datasheet (PDF)

 ..1. Size:244K  vishay
 si1499dh.pdf

SI1499DH SI1499DH

Si1499DHVishay SiliconixP-Channel 1.2 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.078 at VGS = - 4.5 V - 1.6 TrenchFET Power MOSFET0.095 at VGS = - 2.5 V - 1.6 Ultra-Low On-Resistance- 8 0.115 at VGS = - 1.8 V - 1.6 10.5 nC Compliant to RoHS Directive 2002/95/EC0.153

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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