SI1499DH PDF and Equivalents Search

 

SI1499DH Specs and Replacement

Type Designator: SI1499DH

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm

Package: SOT-363

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SI1499DH datasheet

 ..1. Size:244K  vishay
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SI1499DH

Si1499DH Vishay Siliconix P-Channel 1.2 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)c Qg (Typ.) Definition 0.078 at VGS = - 4.5 V - 1.6 TrenchFET Power MOSFET 0.095 at VGS = - 2.5 V - 1.6 Ultra-Low On-Resistance - 8 0.115 at VGS = - 1.8 V - 1.6 10.5 nC Compliant to RoHS Directive 2002/95/EC 0.153... See More ⇒

Detailed specifications: SI1467DH, SI1469DH, SI1470DH, SI1471DH, SI1473DH, SI1480DH, SI1488DH, SI1489EDH, IRF4905, SI1539CDL, SI1551DL, SI1553CDL, SI1555DL, SI1563DH, SI1563EDH, SI1865DDL, SI1869DH

Keywords - SI1499DH MOSFET specs

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