All MOSFET. SI1499DH Datasheet

 

SI1499DH Datasheet and Replacement


   Type Designator: SI1499DH
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 1.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
   Package: SOT-363
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SI1499DH Datasheet (PDF)

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SI1499DH

Si1499DHVishay SiliconixP-Channel 1.2 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.078 at VGS = - 4.5 V - 1.6 TrenchFET Power MOSFET0.095 at VGS = - 2.5 V - 1.6 Ultra-Low On-Resistance- 8 0.115 at VGS = - 1.8 V - 1.6 10.5 nC Compliant to RoHS Directive 2002/95/EC0.153

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IXTP16N50PM | WMK14N70C4 | STP2N60FI | FM200TU-2A | CEB50P03 | 2SK566 | IXTV30N50PS

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