SI1922EDH Specs and Replacement
Type Designator: SI1922EDH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 1.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.198 Ohm
Package: SOT-363
SI1922EDH substitution
- MOSFET ⓘ Cross-Reference Search
SI1922EDH datasheet
si1922edh.pdf
Si1922EDH Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.198 at VGS = 4.5 V 1.3a 100 % Rg Tested 20 0.225 at VGS = 2.5 V 1.3a 0.9 nC Typical ESD Protection 2100 V HBM 0.263 at VGS = 1.8 V 1.3a Compliant to RoHS Di... See More ⇒
Detailed specifications: SI1553CDL, SI1555DL, SI1563DH, SI1563EDH, SI1865DDL, SI1869DH, SI1902CDL, SI1917EDH, 12N60, SI1926DL, SI1958DH, SI1965DH, SI1967DH, SI1972DH, SI2202, SI2300DS, SI2301CDS
Keywords - SI1922EDH MOSFET specs
SI1922EDH cross reference
SI1922EDH equivalent finder
SI1922EDH pdf lookup
SI1922EDH substitution
SI1922EDH replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IPA65R1K0CE | SWF15N65D | G01N20R | BRFL7N65
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E
Popular searches
2sd947 | a763 transistor | fhp40n20 | 2n3035 transistor | 2sb649a | 2sd188 | k b778 transistor | 2n5133 datasheet