SI1958DH PDF and Equivalents Search

 

SI1958DH Specs and Replacement

Type Designator: SI1958DH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 26 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.205 Ohm

Package: SOT-363

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SI1958DH datasheet

 ..1. Size:115K  vishay
 si1958dh.pdf pdf_icon

SI1958DH

Si1958DH Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.205 at VGS = 4.5 V 1.3a TrenchFET Power MOSFET 20 1.2 nC 0.340 at VGS = 2.5 V 1.3a Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Applications SOT-363 ... See More ⇒

Detailed specifications: SI1563DH, SI1563EDH, SI1865DDL, SI1869DH, SI1902CDL, SI1917EDH, SI1922EDH, SI1926DL, IRF1010E, SI1965DH, SI1967DH, SI1972DH, SI2202, SI2300DS, SI2301CDS, SI2301-TP, SI2302ADS

Keywords - SI1958DH MOSFET specs

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