All MOSFET. SI1958DH Datasheet

 

SI1958DH Datasheet and Replacement


   Type Designator: SI1958DH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 26 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.205 Ohm
   Package: SOT-363
 

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SI1958DH Datasheet (PDF)

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SI1958DH

Si1958DHVishay SiliconixDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.205 at VGS = 4.5 V 1.3a TrenchFET Power MOSFET20 1.2 nC0.340 at VGS = 2.5 V 1.3a Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable ApplicationsSOT-363

Datasheet: SI1563DH , SI1563EDH , SI1865DDL , SI1869DH , SI1902CDL , SI1917EDH , SI1922EDH , SI1926DL , TK10A60D , SI1965DH , SI1967DH , SI1972DH , SI2202 , SI2300DS , SI2301CDS , SI2301-TP , SI2302ADS .

History: EMB12N04V | RFP2N20 | IRFI520G | IRFI510GPBF | SI1972DH | NVMFS4841N | RFP30P06

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