All MOSFET. SI1958DH Datasheet

 

SI1958DH MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI1958DH
   Marking Code: CC*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
   |Id|ⓘ - Maximum Drain Current: 1.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 26 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.205 Ohm
   Package: SOT-363

 SI1958DH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI1958DH Datasheet (PDF)

 ..1. Size:115K  vishay
 si1958dh.pdf

SI1958DH SI1958DH

Si1958DHVishay SiliconixDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.205 at VGS = 4.5 V 1.3a TrenchFET Power MOSFET20 1.2 nC0.340 at VGS = 2.5 V 1.3a Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable ApplicationsSOT-363

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SPU04N60C3 | SDF044JAB-S

 

 
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