SI1965DH PDF and Equivalents Search

 

SI1965DH Specs and Replacement

Type Designator: SI1965DH

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 41 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm

Package: SOT-363

SI1965DH substitution

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SI1965DH datasheet

 ..1. Size:108K  vishay
 si1965dh.pdf pdf_icon

SI1965DH

Si1965DH Vishay Siliconix Dual P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.390 at VGS = - 4.5 V - 1.3a TrenchFET Power MOSFET - 12 0.535 at VGS = - 2.5 V - 1.2 1.7 nC Compliant to RoHS Directive 2002/95/EC 0.710 at VGS = - 1.8 V - 1.1 APPLICATIONS Load Switch ... See More ⇒

 ..2. Size:1453K  cn vbsemi
 si1965dh.pdf pdf_icon

SI1965DH

SI1965DH www.VBsemi.tw Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.155 at VGS = - 4.5V - 1.8 TrenchFET Power MOSFET - 20 2.7 nC 0.235 at VGS = - 2.5 V - 1.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SC-70=-6 S1 S2 S1 1 6 D1 G1 G2 G1 2 5 G2 ... See More ⇒

 9.1. Size:108K  vishay
 si1967dh.pdf pdf_icon

SI1965DH

Si1967DH Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.490 at VGS = - 4.5 V - 1.3a TrenchFET Power MOSFET PWM Optimized - 20 0.640 at VGS = - 2.5 V - 1.2 1.6 nC Compliant to RoHS Directive 2002/95/EC 0.790 at VGS = - 1.8 V - 1.0 APPLICATI... See More ⇒

 9.2. Size:858K  cn vbsemi
 si1967dh-t1-ge3.pdf pdf_icon

SI1965DH

SI1967DH-T1-GE3 www.VBsemi.tw Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.155 at VGS = - 4.5V - 1.8 TrenchFET Power MOSFET - 20 2.7 nC 0.235 at VGS = - 2.5 V - 1.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SC-70=-6 S1 S2 S1 1 6 D1 G1 G2 G1 ... See More ⇒

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Detailed specifications: SI1563EDH, SI1865DDL, SI1869DH, SI1902CDL, SI1917EDH, SI1922EDH, SI1926DL, SI1958DH, IRFB3607, SI1967DH, SI1972DH, SI2202, SI2300DS, SI2301CDS, SI2301-TP, SI2302ADS, SI2302ADS-T1

Keywords - SI1965DH MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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