All MOSFET. SI1965DH Datasheet

 

SI1965DH Datasheet and Replacement


   Type Designator: SI1965DH
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 1.14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm
   Package: SOT-363
 

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SI1965DH Datasheet (PDF)

 ..1. Size:108K  vishay
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SI1965DH

Si1965DHVishay SiliconixDual P-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.390 at VGS = - 4.5 V - 1.3a TrenchFET Power MOSFET- 12 0.535 at VGS = - 2.5 V - 1.2 1.7 nC Compliant to RoHS Directive 2002/95/EC0.710 at VGS = - 1.8 V - 1.1APPLICATIONS Load Switch

 ..2. Size:1453K  cn vbsemi
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SI1965DH

SI1965DHwww.VBsemi.twDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.155 at VGS = - 4.5V - 1.8 TrenchFET Power MOSFET- 20 2.7 nC0.235 at VGS = - 2.5 V - 1.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSC-70=-6S1 S2S1 1 6 D1G1 G2G1 2 5 G2

 9.1. Size:108K  vishay
si1967dh.pdf pdf_icon

SI1965DH

Si1967DHVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.490 at VGS = - 4.5 V - 1.3a TrenchFET Power MOSFET PWM Optimized- 20 0.640 at VGS = - 2.5 V - 1.2 1.6 nC Compliant to RoHS Directive 2002/95/EC0.790 at VGS = - 1.8 V - 1.0APPLICATI

 9.2. Size:858K  cn vbsemi
si1967dh-t1-ge3.pdf pdf_icon

SI1965DH

SI1967DH-T1-GE3www.VBsemi.twDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.155 at VGS = - 4.5V - 1.8 TrenchFET Power MOSFET- 20 2.7 nC0.235 at VGS = - 2.5 V - 1.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSC-70=-6S1 S2S1 1 6 D1G1 G2G1

Datasheet: SI1563EDH , SI1865DDL , SI1869DH , SI1902CDL , SI1917EDH , SI1922EDH , SI1926DL , SI1958DH , AON7506 , SI1967DH , SI1972DH , SI2202 , SI2300DS , SI2301CDS , SI2301-TP , SI2302ADS , SI2302ADS-T1 .

History: ELM3C0660A | SSM6P35FE | AFN4996 | CS12N60A8R | FA57SA50LCP | PT530BA | AP60T10GP-HF

Keywords - SI1965DH MOSFET datasheet

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