All MOSFET. SI1972DH Datasheet

 

SI1972DH Datasheet and Replacement


   Type Designator: SI1972DH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm
   Package: SOT-363
 

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SI1972DH Datasheet (PDF)

 ..1. Size:254K  vishay
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SI1972DH

Si1972DHVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.190 at VGS = 10 V 1.330 0.91 nC 100 % Rg Tested0.344 at VGS = 4.5 V 1.3 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSSOT-363SC-70 (6-LEADS) Loa

 9.1. Size:115K  vishay
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SI1972DH

Si1970DHVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.225 at VGS = 4.5 V 1.3a TrenchFET Power MOSFET30 1.15 nC0.345 at VGS = 2.5 V 1.3a Compliant to RoHS Directive 2002/95/ECAPPLICATIONSSOT-363 Load Switch for Portable Applicati

Datasheet: SI1869DH , SI1902CDL , SI1917EDH , SI1922EDH , SI1926DL , SI1958DH , SI1965DH , SI1967DH , AO4407 , SI2202 , SI2300DS , SI2301CDS , SI2301-TP , SI2302ADS , SI2302ADS-T1 , SI2302CDS , SI2302DDS .

History: FTK2N65P

Keywords - SI1972DH MOSFET datasheet

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