SI1972DH MOSFET Datasheet: N-Ch, 30V, 1.3A. Full specification with pinout and replacement list

SI1972DH Specs and Replacement

Type Designator: SI1972DH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm

Package: SOT-363

SI1972DH substitution

- MOSFET ⓘ Cross-Reference Search

SI1972DH datasheet

..1. Size:254K vishay
si1972dh.pdf pdf_icon

Si1972DH Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.190 at VGS = 10 V 1.3 30 0.91 nC 100 % Rg Tested 0.344 at VGS = 4.5 V 1.3 Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 SC-70 (6-LEADS) Loa... See More ⇒

9.1. Size:115K vishay
si1970dh.pdf pdf_icon

Si1970DH Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.225 at VGS = 4.5 V 1.3a TrenchFET Power MOSFET 30 1.15 nC 0.345 at VGS = 2.5 V 1.3a Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 Load Switch for Portable Applicati... See More ⇒

Detailed specifications: SI1869DH, SI1902CDL, SI1917EDH, SI1922EDH, SI1926DL, SI1958DH, SI1965DH, SI1967DH, IRF530, SI2202, SI2300DS, SI2301CDS, SI2301-TP, SI2302ADS, SI2302ADS-T1, SI2302CDS, SI2302DDS