SI2321 MOSFET Datasheet: P-Ch, 20V, 2.9A. Full specification with pinout and replacement list

SI2321 Specs and Replacement

Type Designator: SI2321

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.057 Ohm

Package: SOT-23

SI2321 substitution

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SI2321 datasheet

..1. Size:394K vishay
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0.1. Size:205K vishay
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Si2321DS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFETS 0.057 at VGS = - 4.5 V - 3.3 RoHS 0.076 at VGS = - 2.5 V - 20 - 2.8 COMPLIANT APPLICATIONS 0.110 at VGS = - 1.8 V - 2.3 Load Switch PA Switch TO-236 (SOT-23) G 1 3 D S 2 Top View Si2321... See More ⇒

0.2. Size:1710K kexin
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SMD Type MOSFET P-Channel Enhancement MOSFET SI2321DS (KI2321DS) SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4-0.1 VDS (V) =-20V 3 ID =-3.3A (VGS =-4.5V) RDS(ON) 57m (VGS =-4.5V) RDS(ON) 76m (VGS =-2.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 RDS(ON) 110m (VGS =-1.8V) +0.1 1.9 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain ... See More ⇒

0.3. Size:1781K kexin
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SMD Type MOSFET P-Channel Enhancement MOSFET SI2321DS (KI2321DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) =-20V ID =-3.3A (VGS =-4.5V) RDS(ON) 57m (VGS =-4.5V) 1 2 RDS(ON) 76m (VGS =-2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 110m (VGS =-1.8V) G 1 3 D 1. Gate S 2 2. Source 3. Drai... See More ⇒

Detailed specifications: SI2308BDS, SI2309CDS, SI2311DS, SI2312BDS, SI2312CDS, SI2316BDS, SI2316DS, SI2319CDS, 8N60, SI2323CDS, SI2323DDS, SI2327DS, SI2329DS, SI2331DS, SI2333DDS, SI2334DS, SI2336DS