IRFR9212 Datasheet and Replacement
Type Designator: IRFR9212
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 53 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
Package: TO252
IRFR9212 substitution
IRFR9212 Datasheet (PDF)
irfr9210pbf irfu9210pbf.pdf

PD - 95027AIRFR9210PbFIRFU9210PbF Lead-Free12/14/04Document Number: 91281 www.vishay.com1IRFR/U9210PbFDocument Number: 91281 www.vishay.com2IRFR/U9210PbFDocument Number: 91281 www.vishay.com3IRFR/U9210PbFDocument Number: 91281 www.vishay.com4IRFR/U9210PbFDocument Number: 91281 www.vishay.com5IRFR/U9210PbFDocument Number: 91281 www.vishay.com6
irfr9214.pdf

PD - 9.1658AIRFR/U9214PRELIMINARYHEXFET Power MOSFET P-Channel DVDSS = -250V Surface Mount (IRFR9214) Straight Lead (IRFU9214)RDS(on) = 3.0 Advanced Process TechnologyG Fast Switching Fully Avalanche Rated ID = -2.7ASDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve lowon-resistance per silico
irfr9214 irfu9214.pdf

PD - 95375AIRFR/U9214PbFHEXFET Power MOSFETl P-Channel DVDSS = -250Vl Surface Mount (IRFR9214)l Straight Lead (IRFU9214)RDS(on) = 3.0l Advanced Process TechnologyGl Fast Switchingl Fully Avalanche Rated ID = -2.7ASl Lead-FreeDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve lowon-resistance pe
Datasheet: IRFR9024 , IRFR9024N , IRFR9110 , IRFR9111 , IRFR9120 , IRFR9120N , IRFR9121 , IRFR9210 , 10N65 , IRFR9214 , IRFR9220 , IRFR9222 , IRFR9310 , IRFRC20 , IRFS11N50A , IRFS130 , IRFS131 .
History: MTDN5820Z6 | SM8009NSF
Keywords - IRFR9212 MOSFET datasheet
IRFR9212 cross reference
IRFR9212 equivalent finder
IRFR9212 lookup
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History: MTDN5820Z6 | SM8009NSF



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