SI3127DV Datasheet and Replacement
Type Designator: SI3127DV
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 88 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.089 Ohm
Package: TSOP-6
SI3127DV substitution
SI3127DV Datasheet (PDF)
si3127dv.pdf
Si3127DVwww.vishay.comVishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) d Qg (TYP.) 100 % Rg and UIS tested0.089 at VGS = -10 V -5.1-60 10.1 nC Material categorization:0.146 at VGS = -4.5 V -4For definitions of compliance please seewww.vishay.com/doc?99912 TSOP-6 SingleS4APPLIC
Datasheet: SI2343CDS , SI2347DS , SI2351DS , SI2365EDS , SI2367DS , SI2371EDS , SI2374DS , SI2392ADS , AO4407A , SI3134K , SI3139K , SI3404 , SI3407DV , SI3410DV , SI3415 , SI3417DV , SI3420 .
History: SI2392ADS
Keywords - SI3127DV MOSFET datasheet
SI3127DV cross reference
SI3127DV equivalent finder
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SI3127DV substitution
SI3127DV replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: SI2392ADS
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