SI3127DV PDF and Equivalents Search

 

SI3127DV Specs and Replacement

Type Designator: SI3127DV

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 88 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.089 Ohm

Package: TSOP-6

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SI3127DV datasheet

 ..1. Size:242K  vishay
 si3127dv.pdf pdf_icon

SI3127DV

Si3127DV www.vishay.com Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) d Qg (TYP.) 100 % Rg and UIS tested 0.089 at VGS = -10 V -5.1 -60 10.1 nC Material categorization 0.146 at VGS = -4.5 V -4 For definitions of compliance please see www.vishay.com/doc?99912 TSOP-6 Single S 4 APPLIC... See More ⇒

Detailed specifications: SI2343CDS, SI2347DS, SI2351DS, SI2365EDS, SI2367DS, SI2371EDS, SI2374DS, SI2392ADS, AO4407A, SI3134K, SI3139K, SI3404, SI3407DV, SI3410DV, SI3415, SI3417DV, SI3420

Keywords - SI3127DV MOSFET specs

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