SI3127DV MOSFET. Datasheet pdf. Equivalent
Type Designator: SI3127DV
Marking Code: BL
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 3.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 88 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.089 Ohm
Package: TSOP-6
SI3127DV Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI3127DV Datasheet (PDF)
..1. Size:242K vishay
si3127dv.pdf
si3127dv.pdf
Si3127DVwww.vishay.comVishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) d Qg (TYP.) 100 % Rg and UIS tested0.089 at VGS = -10 V -5.1-60 10.1 nC Material categorization:0.146 at VGS = -4.5 V -4For definitions of compliance please seewww.vishay.com/doc?99912 TSOP-6 SingleS4APPLIC
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