All MOSFET. SI3127DV Datasheet

 

SI3127DV Datasheet and Replacement


   Type Designator: SI3127DV
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 88 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.089 Ohm
   Package: TSOP-6
 

 SI3127DV substitution

   - MOSFET ⓘ Cross-Reference Search

 

SI3127DV Datasheet (PDF)

 ..1. Size:242K  vishay
 si3127dv.pdf pdf_icon

SI3127DV

Si3127DVwww.vishay.comVishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) d Qg (TYP.) 100 % Rg and UIS tested0.089 at VGS = -10 V -5.1-60 10.1 nC Material categorization:0.146 at VGS = -4.5 V -4For definitions of compliance please seewww.vishay.com/doc?99912 TSOP-6 SingleS4APPLIC

Datasheet: SI2343CDS , SI2347DS , SI2351DS , SI2365EDS , SI2367DS , SI2371EDS , SI2374DS , SI2392ADS , AO3407 , SI3134K , SI3139K , SI3404 , SI3407DV , SI3410DV , SI3415 , SI3417DV , SI3420 .

History: AP10P10GH | BSS138AKDW | TPA65R600C | 2SK3079A | 2SK3337W | STW65N65DM2AG | PSMN4R3-30PL

Keywords - SI3127DV MOSFET datasheet

 SI3127DV cross reference
 SI3127DV equivalent finder
 SI3127DV lookup
 SI3127DV substitution
 SI3127DV replacement

 

 
Back to Top

 


 
.