All MOSFET. SI3415 Datasheet

 

SI3415 Datasheet and Replacement


   Type Designator: SI3415
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT-23
 

 SI3415 substitution

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SI3415 Datasheet (PDF)

 ..1. Size:610K  vishay
si3415.pdf pdf_icon

SI3415

 ..2. Size:430K  mcc
si3415.pdf pdf_icon

SI3415

 0.1. Size:1291K  mcc
si3415a.pdf pdf_icon

SI3415

SI3415AFeatures High Power and Current Handing Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1)P-Channel Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55oC to +150oC

 0.2. Size:669K  mcc
si3415b.pdf pdf_icon

SI3415

SI3415BFeatures High Density Cell Design For Ultra Low RDS(on) High Speed SwitchingP-Channel ESD Protected Up to 2.5KV (HBM) Trench Power LV MOSFET TechnologyEnhancement Mode Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Field Effect Transistor Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoH

Datasheet: SI2374DS , SI2392ADS , SI3127DV , SI3134K , SI3139K , SI3404 , SI3407DV , SI3410DV , IRF3205 , SI3417DV , SI3420 , SI3421DV , SI3424BDV , SI3424CDV , SI3424DV , SI3429EDV , SI3430DV .

History: KP504E | MTN10N65FP

Keywords - SI3415 MOSFET datasheet

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