SI3415 MOSFET Datasheet: P-Ch, 20V, 4A. Full specification with pinout and replacement list

SI3415 Specs and Replacement

Type Designator: SI3415

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 205 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOT-23

SI3415 substitution

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SI3415 datasheet

..1. Size:610K vishay
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..2. Size:430K mcc
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0.1. Size:1291K mcc
si3415a.pdf pdf_icon

SI3415A Features High Power and Current Handing Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) P-Channel Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) MOSFET Maximum Ratings Operating Junction Temperature Range -55oC to +150oC ... See More ⇒

0.2. Size:669K mcc
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SI3415B Features High Density Cell Design For Ultra Low RDS(on) High Speed Switching P-Channel ESD Protected Up to 2.5KV (HBM) Trench Power LV MOSFET Technology Enhancement Mode Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Field Effect Transistor Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoH... See More ⇒