SI3415 Datasheet and Replacement
Type Designator: SI3415
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 205 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOT-23
SI3415 substitution
SI3415 Datasheet (PDF)
si3415a.pdf

SI3415AFeatures High Power and Current Handing Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1)P-Channel Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55oC to +150oC
si3415b.pdf

SI3415BFeatures High Density Cell Design For Ultra Low RDS(on) High Speed SwitchingP-Channel ESD Protected Up to 2.5KV (HBM) Trench Power LV MOSFET TechnologyEnhancement Mode Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Field Effect Transistor Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoH
Datasheet: SI2374DS , SI2392ADS , SI3127DV , SI3134K , SI3139K , SI3404 , SI3407DV , SI3410DV , IRF3205 , SI3417DV , SI3420 , SI3421DV , SI3424BDV , SI3424CDV , SI3424DV , SI3429EDV , SI3430DV .
History: KP504E | MTN10N65FP
Keywords - SI3415 MOSFET datasheet
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SI3415 equivalent finder
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History: KP504E | MTN10N65FP



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