All MOSFET. SI3415 Datasheet

 

SI3415 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI3415
   Marking Code: R15
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT-23

 SI3415 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI3415 Datasheet (PDF)

 ..1. Size:610K  vishay
si3415.pdf

SI3415 SI3415

 ..2. Size:430K  mcc
si3415.pdf

SI3415 SI3415

 0.1. Size:1291K  mcc
si3415a.pdf

SI3415 SI3415

SI3415AFeatures High Power and Current Handing Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1)P-Channel Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55oC to +150oC

 0.2. Size:669K  mcc
si3415b.pdf

SI3415 SI3415

SI3415BFeatures High Density Cell Design For Ultra Low RDS(on) High Speed SwitchingP-Channel ESD Protected Up to 2.5KV (HBM) Trench Power LV MOSFET TechnologyEnhancement Mode Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Field Effect Transistor Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoH

 9.1. Size:191K  vishay
si3410dv.pdf

SI3415 SI3415

Si3410DVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0195 at VGS = 10 V 8 TrenchFET Power MOSFET30 9.2 nC Compliant to RoHS Directive 2002/95/EC0.023 at VGS = 4.5 V 8APPLICATIONS Notebook Load Switch Low Current dc-to-dcTSOP-6 T

 9.2. Size:216K  vishay
si3417dv.pdf

SI3415 SI3415

Si3417DVVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)d,e Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.0252 at VGS = - 10 V - 8- 30 15 nCFor definitions of compliance please see 0.0360 at VGS = - 4.5 V - 8www.vishay.com/doc?99912AvailableTSOP-6Top ViewAPPL

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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