SI3456CDV MOSFET Datasheet: N-Ch, 30V, 6.1A. Full specification with pinout and replacement list

SI3456CDV Specs and Replacement

Type Designator: SI3456CDV

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm

Package: TSOP-6

SI3456CDV substitution

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SI3456CDV datasheet

..1. Size:191K vishay
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Si3456CDV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.034 at VGS = 10 V 7.8 TrenchFET Power MOSFET 30 4 nC Compliant to RoHS Directive 2002/95/EC 0.052 at VGS = 4.5 V 6.3 APPLICATIONS Load Switch HDD TSOP-6 Top View D D 1 ... See More ⇒

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8.1. Size:193K vishay
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New Product Si3456DDV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.040 at VGS = 10 V 6.3 TrenchFET Power MOSFET 30 2.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 4.5 V 5.7 APPLICATIONS Load Switch HDD DC/DC Conve... See More ⇒

8.2. Size:65K vishay
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Si3456DV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 100% Rg Tested 0.045 @ VGS = 10 V 5.1 30 30 0.065 @ VGS = 4.5 V 4.3 (1, 2, 5, 6) D TSOP-6 Top View 1 6 3 mm 5 2 (3) G 3 4 2.85 mm (4) S Ordering Information Si3456DV-T1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWIS... See More ⇒