SI3456CDV MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI3456CDV
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 6.1 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 12 ns
Выходная емкость (Cd): 85 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.034 Ohm
Тип корпуса: TSOP-6
SI3456CDV Datasheet (PDF)
si3456cdv.pdf
Si3456CDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.034 at VGS = 10 V 7.8 TrenchFET Power MOSFET30 4 nC Compliant to RoHS Directive 2002/95/EC0.052 at VGS = 4.5 V 6.3APPLICATIONS Load Switch HDDTSOP-6 Top View D D 1
si3456cd.pdf
Si3456CDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.034 at VGS = 10 V 7.8 TrenchFET Power MOSFET30 4 nC Compliant to RoHS Directive 2002/95/EC0.052 at VGS = 4.5 V 6.3APPLICATIONS Load Switch HDDTSOP-6 Top View D D 1
si3456ddv.pdf
New ProductSi3456DDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.040 at VGS = 10 V 6.3 TrenchFET Power MOSFET30 2.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 4.5 V 5.7APPLICATIONS Load Switch HDD DC/DC Conve
si3456dv.pdf
Si3456DVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.045 @ VGS = 10 V 5.130300.065 @ VGS = 4.5 V 4.3(1, 2, 5, 6) DTSOP-6Top View1 63 mm52(3) G3 42.85 mm(4) SOrdering Information: Si3456DV-T1N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWIS
si3456bdv.pdf
Si3456BDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.035 at VGS = 10 V 6.0 TrenchFET Power MOSFET300.052 at VGS = 4.5 V 4.9 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6Top View(1, 2, 5, 6) D1 63 mm52(3) G3 42.
si3456dd.pdf
New ProductSi3456DDVVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.040 at VGS = 10 V 6.3 TrenchFET Power MOSFET30 2.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 4.5 V 5.7APPLICATIONS Load Switch HDD DC/DC Conve
si3456ddv-t1.pdf
SI3456DDV-T1www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC
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