SI3552DV PDF and Equivalents Search

 

SI3552DV Specs and Replacement

Type Designator: SI3552DV

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: TSOP-6

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SI3552DV datasheet

 ..1. Size:199K  vishay
 si3552dv.pdf pdf_icon

SI3552DV

Si3552DV Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.105 at VGS = 10 V 2.5 TrenchFET Power MOSFET N-Channel 30 0.175 at VGS = 4.5 V 2.0 100 % Rg Tested 0.200 at VGS = - 10 V - 1.8 Compliant to RoHS Directive 2002/95/EC P-Channel - 30 0.360 ... See More ⇒

Detailed specifications: SI3477DV, SI3481DV, SI3483CDV, SI3483DV, SI3493BDV, SI3493DV, SI3495DV, SI3499DV, AO4407, SI3585CDV, SI3586DV, SI3588DV, SI3590DV, SI3805DV, SI3850ADV, SI3865DDV, SI3867DV

Keywords - SI3552DV MOSFET specs

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