All MOSFET. SI3552DV Datasheet

 

SI3552DV MOSFET. Datasheet pdf. Equivalent

Type Designator: SI3552DV

Type of Transistor: MOSFET

Type of Control Channel: NP -Channel

Maximum Power Dissipation (Pd): 1.15 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 2.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 9 nS

Maximum Drain-Source On-State Resistance (Rds): 0.105 Ohm

Package: TSOP-6

SI3552DV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI3552DV Datasheet (PDF)

1.1. si3552dv.pdf Size:199K _vishay

SI3552DV
SI3552DV

Si3552DV Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.105 at VGS = 10 V 2.5 • TrenchFET® Power MOSFET N-Channel 30 0.175 at VGS = 4.5 V 2.0 • 100 % Rg Tested 0.200 at VGS = - 10 V - 1.8 • Compliant to RoHS Directive 2002/95/EC P-Channel - 30 0.360

Datasheet: SI3477DV , SI3481DV , SI3483CDV , SI3483DV , SI3493BDV , SI3493DV , SI3495DV , SI3499DV , IRF1010E , SI3585CDV , SI3586DV , SI3588DV , SI3590DV , SI3805DV , SI3850ADV , SI3865DDV , SI3867DV .

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