All MOSFET. SI3552DV Datasheet

 

SI3552DV Datasheet and Replacement


   Type Designator: SI3552DV
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: TSOP-6
 

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SI3552DV Datasheet (PDF)

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SI3552DV

Si3552DVVishay SiliconixN- and P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.105 at VGS = 10 V 2.5 TrenchFET Power MOSFETN-Channel 300.175 at VGS = 4.5 V 2.0 100 % Rg Tested0.200 at VGS = - 10 V - 1.8 Compliant to RoHS Directive 2002/95/ECP-Channel - 300.360

Datasheet: SI3477DV , SI3481DV , SI3483CDV , SI3483DV , SI3493BDV , SI3493DV , SI3495DV , SI3499DV , P60NF06 , SI3585CDV , SI3586DV , SI3588DV , SI3590DV , SI3805DV , SI3850ADV , SI3865DDV , SI3867DV .

History: FDS8984-NL | OSG60R030HT3ZF | SI4670DY | CHM5P03PAGP | IRF3711ZCL | OSG60R1K2PF | AP70L02GS

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