All MOSFET. SI3590DV Datasheet

 

SI3590DV MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI3590DV
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.8 nC
   trⓘ - Rise Time: 12 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm
   Package: TSOP-6

 SI3590DV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI3590DV Datasheet (PDF)

 ..1. Size:228K  vishay
 si3590dv.pdf

SI3590DV SI3590DV

Si3590DVVishay SiliconixN- and P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition TrenchFET Power MOSFET0.077 at VGS = 4.5 V 3N-Channel 30 Ultra Low RDS(on) N- and P-Channel for High 0.120 at VGS = 2.5 V 2Efficiency0.170 at VGS = - 4.5 V - 2 Optimized for High-Side/

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IPB100N04S2L-03 | 4N60L-TQ2-R | IXTR62N15P

 

 
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