All MOSFET. SI3590DV Datasheet

 

SI3590DV MOSFET. Datasheet pdf. Equivalent

Type Designator: SI3590DV

Type of Transistor: MOSFET

Type of Control Channel: NP -Channel

Maximum Power Dissipation (Pd): 0.83 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 2.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 12 nS

Maximum Drain-Source On-State Resistance (Rds): 0.077 Ohm

Package: TSOP-6

SI3590DV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SI3590DV Datasheet (PDF)

1.1. si3590dv.pdf Size:228K _vishay

SI3590DV
SI3590DV

Si3590DV Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition • TrenchFET® Power MOSFET 0.077 at VGS = 4.5 V 3 N-Channel 30 • Ultra Low RDS(on) N- and P-Channel for High 0.120 at VGS = 2.5 V 2 Efficiency 0.170 at VGS = - 4.5 V - 2 • Optimized for High-Side/

Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .

 
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MOSFET: NVJD4152P | NVGS5120P | NVGS4141N | NVGS4111P | NVGS3443 | NVGS3441 | NVGS3136P | NVGS3130N | NVF6P02 | NVF5P03 | NVF3055L108 | NVF3055-100 | NVF2955 | NVF2201N | NVE4153N |

 

 

 
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