All MOSFET. SI3590DV Datasheet

 

SI3590DV Datasheet and Replacement


   Type Designator: SI3590DV
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm
   Package: TSOP-6
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SI3590DV Datasheet (PDF)

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SI3590DV

Si3590DVVishay SiliconixN- and P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition TrenchFET Power MOSFET0.077 at VGS = 4.5 V 3N-Channel 30 Ultra Low RDS(on) N- and P-Channel for High 0.120 at VGS = 2.5 V 2Efficiency0.170 at VGS = - 4.5 V - 2 Optimized for High-Side/

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History: AOWF9N70 | HLML6401 | HFS10N60U | STH15NB50FI | HMS3205 | MS23P25 | AP85T03GH-HF

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