SI3590DV MOSFET. Datasheet pdf. Equivalent
Type Designator: SI3590DV
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Maximum Power Dissipation (Pd): 0.83 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V
Maximum Drain Current |Id|: 2.5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 12 nS
Maximum Drain-Source On-State Resistance (Rds): 0.077 Ohm
Package: TSOP-6
SI3590DV Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI3590DV Datasheet (PDF)
1.1. si3590dv.pdf 
Size:228K _vishay
Si3590DV Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition • TrenchFET® Power MOSFET 0.077 at VGS = 4.5 V 3 N-Channel 30 • Ultra Low RDS(on) N- and P-Channel for High 0.120 at VGS = 2.5 V 2 Efficiency 0.170 at VGS = - 4.5 V - 2 • Optimized for High-Side/
Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .
