SI3590DV PDF and Equivalents Search

 

SI3590DV Specs and Replacement

Type Designator: SI3590DV

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm

Package: TSOP-6

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SI3590DV datasheet

 ..1. Size:228K  vishay
 si3590dv.pdf pdf_icon

SI3590DV

Si3590DV Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition TrenchFET Power MOSFET 0.077 at VGS = 4.5 V 3 N-Channel 30 Ultra Low RDS(on) N- and P-Channel for High 0.120 at VGS = 2.5 V 2 Efficiency 0.170 at VGS = - 4.5 V - 2 Optimized for High-Side/... See More ⇒

Detailed specifications: SI3493BDV, SI3493DV, SI3495DV, SI3499DV, SI3552DV, SI3585CDV, SI3586DV, SI3588DV, IRF1407, SI3805DV, SI3850ADV, SI3865DDV, SI3867DV, SI3879DV, SI3900DV, SI3932DV, SI3981DV

Keywords - SI3590DV MOSFET specs

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