SI3805DV PDF and Equivalents Search

 

SI3805DV Specs and Replacement

Type Designator: SI3805DV

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.084 Ohm

Package: TSOP-6

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SI3805DV datasheet

 ..1. Size:228K  vishay
 si3805dv.pdf pdf_icon

SI3805DV

New Product Si3805DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Qg (Typ.) ID (A)a Definition 0.084 at VGS = - 10 V - 3.3 LITTLE FOOT Plus Schottky Power MOSFET - 20 0.108 at VGS = - 4.5 V - 2.9 4 nC Compliant to RoHS Directive 2002/95/EC 0.175 at VGS = - 2... See More ⇒

Detailed specifications: SI3493DV, SI3495DV, SI3499DV, SI3552DV, SI3585CDV, SI3586DV, SI3588DV, SI3590DV, 2SK3568, SI3850ADV, SI3865DDV, SI3867DV, SI3879DV, SI3900DV, SI3932DV, SI3981DV, SI3993CDV

Keywords - SI3805DV MOSFET specs

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