All MOSFET. SI3805DV Datasheet

 

SI3805DV Datasheet and Replacement


   Type Designator: SI3805DV
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.084 Ohm
   Package: TSOP-6
 

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SI3805DV Datasheet (PDF)

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SI3805DV

New ProductSi3805DVVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)aDefinition0.084 at VGS = - 10 V - 3.3 LITTLE FOOT Plus Schottky Power MOSFET- 20 0.108 at VGS = - 4.5 V - 2.9 4 nC Compliant to RoHS Directive 2002/95/EC0.175 at VGS = - 2

Datasheet: SI3493DV , SI3495DV , SI3499DV , SI3552DV , SI3585CDV , SI3586DV , SI3588DV , SI3590DV , 5N65 , SI3850ADV , SI3865DDV , SI3867DV , SI3879DV , SI3900DV , SI3932DV , SI3981DV , SI3993CDV .

History: NCEP072N10A | MTN8N50FP | AM2370N | HSBA3056 | 7NM65G-TF1-T | NCE65N800F | STB190NF04-1

Keywords - SI3805DV MOSFET datasheet

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