All MOSFET. SI3879DV Datasheet

 

SI3879DV MOSFET. Datasheet pdf. Equivalent

Type Designator: SI3879DV

SMD Transistor Code: IG

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 54 nS

Drain-Source Capacitance (Cd): 132 pF

Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

Package: TSOP-6

SI3879DV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI3879DV Datasheet (PDF)

1.1. si3879dv.pdf Size:233K _vishay

SI3879DV
SI3879DV

Si3879DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) Qg (Typ.) ID (A)a Definition 0.070 at VGS = - 5.0 V - 5.0 - 20 4.5 nC • LITTLE FOOT® Plus Schottky Power MOSFET 0.105 at VGS = - 2.5 V - 4.2 • Compliant to RoHS Directive 2002/95/EC SCHOTTKY PRODUCT SUMMARY

Datasheet: SI3585CDV , SI3586DV , SI3588DV , SI3590DV , SI3805DV , SI3850ADV , SI3865DDV , SI3867DV , IRFZ44A , SI3900DV , SI3932DV , SI3981DV , SI3993CDV , SI4004DY , SI4010DY , SI4048DY , SI4090DY .

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