SI3879DV PDF and Equivalents Search

 

SI3879DV Specs and Replacement

Type Designator: SI3879DV

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 132 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TSOP-6

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SI3879DV datasheet

 ..1. Size:233K  vishay
 si3879dv.pdf pdf_icon

SI3879DV

Si3879DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Qg (Typ.) ID (A)a Definition 0.070 at VGS = - 5.0 V - 5.0 - 20 4.5 nC LITTLE FOOT Plus Schottky Power MOSFET 0.105 at VGS = - 2.5 V - 4.2 Compliant to RoHS Directive 2002/95/EC SCHOTTKY PRODUCT SUMMARY ... See More ⇒

Detailed specifications: SI3585CDV, SI3586DV, SI3588DV, SI3590DV, SI3805DV, SI3850ADV, SI3865DDV, SI3867DV, SI2302, SI3900DV, SI3932DV, SI3981DV, SI3993CDV, SI4004DY, SI4010DY, SI4048DY, SI4090DY

Keywords - SI3879DV MOSFET specs

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