All MOSFET. SI3879DV Datasheet

 

SI3879DV Datasheet and Replacement


   Type Designator: SI3879DV
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TSOP-6
 

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SI3879DV Datasheet (PDF)

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SI3879DV

Si3879DVVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)aDefinition0.070 at VGS = - 5.0 V - 5.0- 20 4.5 nC LITTLE FOOT Plus Schottky Power MOSFET0.105 at VGS = - 2.5 V - 4.2 Compliant to RoHS Directive 2002/95/ECSCHOTTKY PRODUCT SUMMARY

Datasheet: SI3585CDV , SI3586DV , SI3588DV , SI3590DV , SI3805DV , SI3850ADV , SI3865DDV , SI3867DV , IRFZ46N , SI3900DV , SI3932DV , SI3981DV , SI3993CDV , SI4004DY , SI4010DY , SI4048DY , SI4090DY .

History: SIHFR9020 | SI3495DV | SI4004DY

Keywords - SI3879DV MOSFET datasheet

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