SI3932DV Datasheet. Specs and Replacement

Type Designator: SI3932DV  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.14 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: TSOP-6

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SI3932DV datasheet

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SI3932DV

New Product Si3932DV Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.058 at VGS = 10 V TrenchFET Power MOSFET 3.7 30 1.8 nC 100 % Rg Tested 0.073 at VGS = 4.5 V 3.3 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch fo... See More ⇒

Detailed specifications: SI3588DV, SI3590DV, SI3805DV, SI3850ADV, SI3865DDV, SI3867DV, SI3879DV, SI3900DV, 18N50, SI3981DV, SI3993CDV, SI4004DY, SI4010DY, SI4048DY, SI4090DY, SI4100DY, SI4101DY

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.