All MOSFET. SI3932DV Datasheet

 

SI3932DV Datasheet and Replacement


   Type Designator: SI3932DV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: TSOP-6
 

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SI3932DV Datasheet (PDF)

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SI3932DV

New ProductSi3932DVVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.058 at VGS = 10 V TrenchFET Power MOSFET3.730 1.8 nC 100 % Rg Tested0.073 at VGS = 4.5 V 3.3 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch fo

Datasheet: SI3588DV , SI3590DV , SI3805DV , SI3850ADV , SI3865DDV , SI3867DV , SI3879DV , SI3900DV , 75N75 , SI3981DV , SI3993CDV , SI4004DY , SI4010DY , SI4048DY , SI4090DY , SI4100DY , SI4101DY .

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