SI3981DV MOSFET Datasheet: P-Ch, 20V, 1.6A. Full specification with pinout and replacement list

SI3981DV Specs and Replacement

Type Designator: SI3981DV

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.185 Ohm

Package: TSOP-6

SI3981DV substitution

- MOSFET ⓘ Cross-Reference Search

SI3981DV datasheet

..1. Size:200K vishay
si3981dv.pdf pdf_icon

Si3981DV Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.185 at VGS = - 4.5 V - 1.9 TrenchFET Power MOSFET 0.260 at VGS = - 2.5 V - 20 - 1.6 Compliant to RoHS Directive 2002/95/EC 0.385 at VGS = - 1.8 V - 0.7 APPLICATIONS Battery Switch for Porta... See More ⇒

9.1. Size:197K vishay
si3983dv.pdf pdf_icon

Si3983DV Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.110 at VGS = - 4.5 V - 2.5 TrenchFET Power MOSFET 0.145 at VGS = - 2.5 V - 20 - 2.0 Symetrical Dual P-Channel 0.220 at VGS = - 1.8 V - 1.0 Compliant to RoHS Directive 2002/95/EC APPLICATIO... See More ⇒

Detailed specifications: SI3590DV, SI3805DV, SI3850ADV, SI3865DDV, SI3867DV, SI3879DV, SI3900DV, SI3932DV, 20N50, SI3993CDV, SI4004DY, SI4010DY, SI4048DY, SI4090DY, SI4100DY, SI4101DY, SI4102DY