All MOSFET. SI3981DV Datasheet

 

SI3981DV MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI3981DV
   Marking Code: MC*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 1.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5 nC
   trⓘ - Rise Time: 50 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.185 Ohm
   Package: TSOP-6

 SI3981DV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI3981DV Datasheet (PDF)

 ..1. Size:200K  vishay
 si3981dv.pdf

SI3981DV SI3981DV

Si3981DVVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.185 at VGS = - 4.5 V - 1.9 TrenchFET Power MOSFET0.260 at VGS = - 2.5 V - 20 - 1.6 Compliant to RoHS Directive 2002/95/EC0.385 at VGS = - 1.8 V - 0.7APPLICATIONS Battery Switch for Porta

 9.1. Size:197K  vishay
 si3983dv.pdf

SI3981DV SI3981DV

Si3983DVVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.110 at VGS = - 4.5 V - 2.5 TrenchFET Power MOSFET0.145 at VGS = - 2.5 V - 20 - 2.0 Symetrical Dual P-Channel0.220 at VGS = - 1.8 V - 1.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIO

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History: SI4288DY | QM6007S | QS6U22 | SI8417DB | SIA415DJ

 

 
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