SI3981DV Datasheet and Replacement
Type Designator: SI3981DV
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 1.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 50 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.185 Ohm
Package: TSOP-6
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SI3981DV Datasheet (PDF)
si3981dv.pdf

Si3981DVVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.185 at VGS = - 4.5 V - 1.9 TrenchFET Power MOSFET0.260 at VGS = - 2.5 V - 20 - 1.6 Compliant to RoHS Directive 2002/95/EC0.385 at VGS = - 1.8 V - 0.7APPLICATIONS Battery Switch for Porta
si3983dv.pdf

Si3983DVVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.110 at VGS = - 4.5 V - 2.5 TrenchFET Power MOSFET0.145 at VGS = - 2.5 V - 20 - 2.0 Symetrical Dual P-Channel0.220 at VGS = - 1.8 V - 1.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIO
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FDMS9620S | IRFI7536G | WMM11N80M3
Keywords - SI3981DV MOSFET datasheet
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History: FDMS9620S | IRFI7536G | WMM11N80M3



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