All MOSFET. SI3981DV Datasheet

 

SI3981DV MOSFET. Datasheet pdf. Equivalent

Type Designator: SI3981DV

SMD Transistor Code: MC*

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.8 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.1 V

Maximum Drain Current |Id|: 1.6 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 50 nS

Maximum Drain-Source On-State Resistance (Rds): 0.185 Ohm

Package: TSOP-6

SI3981DV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI3981DV Datasheet (PDF)

1.1. si3981dv.pdf Size:200K _vishay

SI3981DV
SI3981DV

Si3981DV Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.185 at VGS = - 4.5 V - 1.9 • TrenchFET® Power MOSFET 0.260 at VGS = - 2.5 V - 20 - 1.6 • Compliant to RoHS Directive 2002/95/EC 0.385 at VGS = - 1.8 V - 0.7 APPLICATIONS • Battery Switch for Porta

5.1. si3983dv.pdf Size:197K _vishay

SI3981DV
SI3981DV

Si3983DV Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (A) Definition 0.110 at VGS = - 4.5 V - 2.5 TrenchFET Power MOSFET 0.145 at VGS = - 2.5 V - 20 - 2.0 Symetrical Dual P-Channel 0.220 at VGS = - 1.8 V - 1.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Batter

Datasheet: SI3590DV , SI3805DV , SI3850ADV , SI3865DDV , SI3867DV , SI3879DV , SI3900DV , SI3932DV , IRF9640 , SI3993CDV , SI4004DY , SI4010DY , SI4048DY , SI4090DY , SI4100DY , SI4101DY , SI4102DY .

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