SI3993CDV Datasheet and Replacement
Type Designator: SI3993CDV
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.14 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 45 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.111 Ohm
Package: TSOP-6
SI3993CDV substitution
SI3993CDV Datasheet (PDF)
si3993cdv.pdf

New ProductSi3993CDVVishay SiliconixDual P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.111 at VGS = - 10 V - 2.9 TrenchFET Power MOSFET- 30 2.7 nC0.188 at VGS = - 4.5 V - 2.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load
si3993dv.pdf

Si3993DVVishay SiliconixDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.133 at VGS = - 10 V - 2.2 TrenchFET Power MOSFET- 300.245 at VGS = - 4.5 V - 1.6 Symetrical Dual P-Channel Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Battery Switch for Porta
Datasheet: SI3805DV , SI3850ADV , SI3865DDV , SI3867DV , SI3879DV , SI3900DV , SI3932DV , SI3981DV , CS150N03A8 , SI4004DY , SI4010DY , SI4048DY , SI4090DY , SI4100DY , SI4101DY , SI4102DY , SI4104DY .
History: 4N60L-TF2-T
Keywords - SI3993CDV MOSFET datasheet
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History: 4N60L-TF2-T



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