All MOSFET. SI4004DY Datasheet

 

SI4004DY Datasheet and Replacement


   Type Designator: SI4004DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0138 Ohm
   Package: SO-8
 

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SI4004DY Datasheet (PDF)

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SI4004DY

New ProductSi4004DYVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.)Definition0.0138 at VGS = 10 V 12 TrenchFET Power MOSFET20 10.6 nC0.0192 at VGS = 4.5 V 12 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSSO-8 DC/

Datasheet: SI3850ADV , SI3865DDV , SI3867DV , SI3879DV , SI3900DV , SI3932DV , SI3981DV , SI3993CDV , IRFB31N20D , SI4010DY , SI4048DY , SI4090DY , SI4100DY , SI4101DY , SI4102DY , SI4104DY , SI4108DY .

History: PJF3NA80

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