SI4004DY Specs and Replacement
Type Designator: SI4004DY
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 440 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0138 Ohm
Package: SO-8
SI4004DY substitution
- MOSFET ⓘ Cross-Reference Search
SI4004DY datasheet
si4004dy.pdf
New Product Si4004DY Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a, e Qg (Typ.) Definition 0.0138 at VGS = 10 V 12 TrenchFET Power MOSFET 20 10.6 nC 0.0192 at VGS = 4.5 V 12 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS SO-8 DC/... See More ⇒
Detailed specifications: SI3850ADV, SI3865DDV, SI3867DV, SI3879DV, SI3900DV, SI3932DV, SI3981DV, SI3993CDV, IRF2807, SI4010DY, SI4048DY, SI4090DY, SI4100DY, SI4101DY, SI4102DY, SI4104DY, SI4108DY
Keywords - SI4004DY MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: HM4892A
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