SI4090DY Datasheet. Specs and Replacement
Type Designator: SI4090DY 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 790 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: SO-8
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SI4090DY datasheet
si4090dy.pdf
New Product Si4090DY Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0100 at VGS = 10 V 19.7 Material categorization For definitions of compliance please see 100 0.0105 at VGS = 7.5 V 19.2 27.9 nC www.vishay.com/doc?99912 0.0120 at VGS = 6.0 V 18... See More ⇒
Detailed specifications: SI3879DV, SI3900DV, SI3932DV, SI3981DV, SI3993CDV, SI4004DY, SI4010DY, SI4048DY, 2N60, SI4100DY, SI4101DY, SI4102DY, SI4104DY, SI4108DY, SI4110DY, SI4114DY, SI4116DY
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