SI4090DY Datasheet and Replacement
Type Designator: SI4090DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 13.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 790 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: SO-8
- MOSFET Cross-Reference Search
SI4090DY Datasheet (PDF)
si4090dy.pdf

New ProductSi4090DYVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0100 at VGS = 10 V 19.7 Material categorization:For definitions of compliance please see100 0.0105 at VGS = 7.5 V 19.2 27.9 nCwww.vishay.com/doc?999120.0120 at VGS = 6.0 V 18
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AM4492N | TSM4424CS | LKK47-06C5 | STM6375 | AP75N07GP | BRCS200P03DP | IRFB3004GPBF
Keywords - SI4090DY MOSFET datasheet
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History: AM4492N | TSM4424CS | LKK47-06C5 | STM6375 | AP75N07GP | BRCS200P03DP | IRFB3004GPBF



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