SI4090DY MOSFET. Datasheet pdf. Equivalent
Type Designator: SI4090DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.3 V
|Id|ⓘ - Maximum Drain Current: 13.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 790 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: SO-8
SI4090DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4090DY Datasheet (PDF)
si4090dy.pdf
New ProductSi4090DYVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0100 at VGS = 10 V 19.7 Material categorization:For definitions of compliance please see100 0.0105 at VGS = 7.5 V 19.2 27.9 nCwww.vishay.com/doc?999120.0120 at VGS = 6.0 V 18
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: RTL035N03TR | IXFH16N50P | APT1001R1BVFR
History: RTL035N03TR | IXFH16N50P | APT1001R1BVFR
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