SI4090DY Spec and Replacement
Type Designator: SI4090DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 790 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: SO-8
SI4090DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4090DY Specs
si4090dy.pdf
New Product Si4090DY Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0100 at VGS = 10 V 19.7 Material categorization For definitions of compliance please see 100 0.0105 at VGS = 7.5 V 19.2 27.9 nC www.vishay.com/doc?99912 0.0120 at VGS = 6.0 V 18... See More ⇒
Detailed specifications: SI3879DV , SI3900DV , SI3932DV , SI3981DV , SI3993CDV , SI4004DY , SI4010DY , SI4048DY , 2N60 , SI4100DY , SI4101DY , SI4102DY , SI4104DY , SI4108DY , SI4110DY , SI4114DY , SI4116DY .
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