SI4134DY Datasheet and Replacement
Type Designator: SI4134DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 187 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: SO-8
SI4134DY substitution
SI4134DY Datasheet (PDF)
si4134dy.pdf

Si4134DYVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition 0.014 at VGS = 10 V 14 TrenchFET Power MOSFET 30 7.3 nC0.0175 at VGS = 4.5 V 12.5 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSSO-8 DC/DC Conversion-
si4136dy.pdf

New ProductSi4136DYVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.002 at VGS = 10 V 46 100 % Rg and UIS Tested20 34 nC0.0025 at VGS = 4.5 V 41APPLICATIONS OR-ing DC/DCSO-8D SD1 8SD2 7SD3 6GD G 4 5
Datasheet: SI4108DY , SI4110DY , SI4114DY , SI4116DY , SI4122DY , SI4124DY , SI4126DY , SI4128DY , AON7403 , SI4136DY , SI4143DY , SI4154DY , SI4156DY , SI4160DY , SI4162DY , SI4164DY , SI4166DY .
History: SFB347N100C2 | IRF9Z30PBF
Keywords - SI4134DY MOSFET datasheet
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History: SFB347N100C2 | IRF9Z30PBF



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