All MOSFET. SI4143DY Datasheet

 

SI4143DY Datasheet and Replacement


   Type Designator: SI4143DY
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 17.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 750 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: SO-8
 

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SI4143DY Datasheet (PDF)

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SI4143DY

Si4143DYwww.vishay.comVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) d Qg (TYP.) 100 % Rg and UIS tested0.0062 at VGS = -10 V -25.3 Material categorization: -30 0.0074 at VGS = -6 V -23.2 54 nCFor definitions of compliance please see 0.0092 at VGS = -4.5 V -20.8www.vishay.com/doc?99

Datasheet: SI4114DY , SI4116DY , SI4122DY , SI4124DY , SI4126DY , SI4128DY , SI4134DY , SI4136DY , EMB04N03H , SI4154DY , SI4156DY , SI4160DY , SI4162DY , SI4164DY , SI4166DY , SI4168DY , SI4170DY .

History: MDF11N65BTH

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