SI4143DY Datasheet. Specs and Replacement

Type Designator: SI4143DY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 17.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 750 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm

Package: SO-8

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SI4143DY datasheet

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SI4143DY

Si4143DY www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) d Qg (TYP.) 100 % Rg and UIS tested 0.0062 at VGS = -10 V -25.3 Material categorization -30 0.0074 at VGS = -6 V -23.2 54 nC For definitions of compliance please see 0.0092 at VGS = -4.5 V -20.8 www.vishay.com/doc?99... See More ⇒

Detailed specifications: SI4114DY, SI4116DY, SI4122DY, SI4124DY, SI4126DY, SI4128DY, SI4134DY, SI4136DY, AON7403, SI4154DY, SI4156DY, SI4160DY, SI4162DY, SI4164DY, SI4166DY, SI4168DY, SI4170DY

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