All MOSFET. SI4143DY Datasheet

 

SI4143DY Datasheet and Replacement


   Type Designator: SI4143DY
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 17.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 111 nC
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 750 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: SO-8
 

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SI4143DY Datasheet (PDF)

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SI4143DY

Si4143DYwww.vishay.comVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) d Qg (TYP.) 100 % Rg and UIS tested0.0062 at VGS = -10 V -25.3 Material categorization: -30 0.0074 at VGS = -6 V -23.2 54 nCFor definitions of compliance please see 0.0092 at VGS = -4.5 V -20.8www.vishay.com/doc?99

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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