All MOSFET. SI4156DY Datasheet

 

SI4156DY Datasheet and Replacement


   Type Designator: SI4156DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: SO-8
 

 SI4156DY substitution

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SI4156DY Datasheet (PDF)

 ..1. Size:253K  vishay
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SI4156DY

Si4156DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY DefinitionVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.006 at VGS = 10 V 24 100 % Rg Tested30 12 nC0.008 at VGS = 4.5 V 100 % UIS Tested21 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC Conve

 9.1. Size:248K  vishay
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SI4156DY

New ProductSi4158DYVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0025 at VGS = 10 V 36.5 100 % Rg Tested20 40 nC0.003 at VGS = 4.5 V 33.3 100 % UIS TestedAPPLICATIONS Low-Side MOSFET for Synchronous Buck OR-ingSO-8 D SD1 8 SD

 9.2. Size:86K  vishay
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SI4156DY

New ProductSi4154DYVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0033 at VGS = 10 V 36 TrenchFET Power MOSFET 40 32.5 nC 100 % Rg and UIS Tested0.0039 at VGS = 4.5 V 33 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS POL

Datasheet: SI4122DY , SI4124DY , SI4126DY , SI4128DY , SI4134DY , SI4136DY , SI4143DY , SI4154DY , 2SK3918 , SI4160DY , SI4162DY , SI4164DY , SI4166DY , SI4168DY , SI4170DY , SI4172DY , SI4174DY .

History: STP80NE03L-06

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