SI4156DY Datasheet and Replacement
Type Designator: SI4156DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: SO-8
SI4156DY substitution
SI4156DY Datasheet (PDF)
si4156dy.pdf

Si4156DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY DefinitionVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.006 at VGS = 10 V 24 100 % Rg Tested30 12 nC0.008 at VGS = 4.5 V 100 % UIS Tested21 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC Conve
si4158dy.pdf

New ProductSi4158DYVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0025 at VGS = 10 V 36.5 100 % Rg Tested20 40 nC0.003 at VGS = 4.5 V 33.3 100 % UIS TestedAPPLICATIONS Low-Side MOSFET for Synchronous Buck OR-ingSO-8 D SD1 8 SD
si4154dy.pdf

New ProductSi4154DYVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0033 at VGS = 10 V 36 TrenchFET Power MOSFET 40 32.5 nC 100 % Rg and UIS Tested0.0039 at VGS = 4.5 V 33 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS POL
Datasheet: SI4122DY , SI4124DY , SI4126DY , SI4128DY , SI4134DY , SI4136DY , SI4143DY , SI4154DY , 2SK3918 , SI4160DY , SI4162DY , SI4164DY , SI4166DY , SI4168DY , SI4170DY , SI4172DY , SI4174DY .
History: STP80NE03L-06
Keywords - SI4156DY MOSFET datasheet
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History: STP80NE03L-06



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