SI4156DY Datasheet. Specs and Replacement

Type Designator: SI4156DY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: SO-8

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SI4156DY datasheet

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SI4156DY

Si4156DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.006 at VGS = 10 V 24 100 % Rg Tested 30 12 nC 0.008 at VGS = 4.5 V 100 % UIS Tested 21 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Conve... See More ⇒

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SI4156DY

New Product Si4158DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0025 at VGS = 10 V 36.5 100 % Rg Tested 20 40 nC 0.003 at VGS = 4.5 V 33.3 100 % UIS Tested APPLICATIONS Low-Side MOSFET for Synchronous Buck OR-ing SO-8 D SD 1 8 SD ... See More ⇒

 9.2. Size:86K  vishay
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SI4156DY

New Product Si4154DY Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0033 at VGS = 10 V 36 TrenchFET Power MOSFET 40 32.5 nC 100 % Rg and UIS Tested 0.0039 at VGS = 4.5 V 33 Compliant to RoHS Directive 2002/95/EC APPLICATIONS POL ... See More ⇒

Detailed specifications: SI4122DY, SI4124DY, SI4126DY, SI4128DY, SI4134DY, SI4136DY, SI4143DY, SI4154DY, EMB04N03H, SI4160DY, SI4162DY, SI4164DY, SI4166DY, SI4168DY, SI4170DY, SI4172DY, SI4174DY

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