SI4156DY - параметры транзистора MOSFET, его аналоги, datasheet

SI4156DY Datasheet (PDF)

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Si4156DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY DefinitionVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.006 at VGS = 10 V 24 100 % Rg Tested30 12 nC0.008 at VGS = 4.5 V 100 % UIS Tested21 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC Conve

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New ProductSi4158DYVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0025 at VGS = 10 V 36.5 100 % Rg Tested20 40 nC0.003 at VGS = 4.5 V 33.3 100 % UIS TestedAPPLICATIONS Low-Side MOSFET for Synchronous Buck OR-ingSO-8 D SD1 8 SD

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New ProductSi4154DYVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0033 at VGS = 10 V 36 TrenchFET Power MOSFET 40 32.5 nC 100 % Rg and UIS Tested0.0039 at VGS = 4.5 V 33 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS POL

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