SI4186DY Datasheet. Specs and Replacement

Type Designator: SI4186DY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 1085 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: SO-8

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SI4186DY datasheet

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SI4186DY

New Product Si4186DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0026 at VGS = 10 V 35.8 TrenchFET Power MOSFET 20 28.7 nC 100 % Rg Tested 0.0032 at VGS = 4.5 V 32.2 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATI... See More ⇒

Detailed specifications: SI4164DY, SI4166DY, SI4168DY, SI4170DY, SI4172DY, SI4174DY, SI4176DY, SI4178DY, IRF740, SI4190ADY, SI4190DY, SI4196DY, SI4200DY, SI4202DY, SI4204DY, SI4210DY, SI4214DDY

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