All MOSFET. SI4186DY Datasheet

 

SI4186DY MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI4186DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 25.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 35.8 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 1085 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: SO-8

 SI4186DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4186DY Datasheet (PDF)

 ..1. Size:270K  vishay
 si4186dy.pdf

SI4186DY SI4186DY

New ProductSi4186DYVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0026 at VGS = 10 V 35.8 TrenchFET Power MOSFET20 28.7 nC 100 % Rg Tested0.0032 at VGS = 4.5 V 32.2 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATI

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