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SI4186DY Spec and Replacement


   Type Designator: SI4186DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 1085 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: SO-8

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SI4186DY Specs

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SI4186DY

New Product Si4186DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0026 at VGS = 10 V 35.8 TrenchFET Power MOSFET 20 28.7 nC 100 % Rg Tested 0.0032 at VGS = 4.5 V 32.2 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATI... See More ⇒

Detailed specifications: SI4164DY , SI4166DY , SI4168DY , SI4170DY , SI4172DY , SI4174DY , SI4176DY , SI4178DY , IRF740 , SI4190ADY , SI4190DY , SI4196DY , SI4200DY , SI4202DY , SI4204DY , SI4210DY , SI4214DDY .

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